On the effect of silicon in CVD of sp2 hybridized boron nitride thin films
2013
Online
Elektronische Ressource
The influence of silicon on the growth of epitaxial rhombohedral boron nitride (r-BN) films deposited on sapphire (0001) by chemical vapor deposition is investigated. X-ray diffraction measurements and secondary ion mass spectrometry show that silicon favors the formation of r-BN and is incorporated into the film.
Funding Agencies|Swedish Research Council|VR 621-2009-5264VR 622-2008-1247
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On the effect of silicon in CVD of sp2 hybridized boron nitride thin films
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Veröffentlichung: | 2013 |
Medientyp: | Elektronische Ressource |
DOI: | 10.1039.c2ce26423d |
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