On-wafer Micromachined Waveguide Characterization with CPW Probe to Rectangular Waveguide Transition up to 500 GHz
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Elektronische Ressource
We report on coplanar waveguide to micromachined waveguide transitions for on-wafer device characterization. The transitions are designed in a silicon micromachined waveguide technology using silicon on insulator wafers together with the devices under test. A previous design at 220–330 GHz with in-band radiation characteristic is modified to eliminate the radiation and allow it to be scaled to higher frequencies. Simulation results for 220–330 GHz and 330–500 GHz are obtained, and the transition has an insertion loss of better than 0.5 and 1.2 dB, respectively. The transition is fabricated and characterized at 220–330 GHz, with an insertion loss of better than 0.7 dB and a return loss in excess of 10 dB over the whole band.
QC 20201118
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On-wafer Micromachined Waveguide Characterization with CPW Probe to Rectangular Waveguide Transition up to 500 GHz
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Medientyp: | Elektronische Ressource |
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