Tunnel Nitride Passivated Contacts for Silicon Solar Cells Formed by Cat-CVD
2021
Online
Elektronische Ressource
An ultra-thin silicon nitride (SiN_x) layer formed by catalytic chemical vapor deposition (Cat-CVD) is used to replace the Si dioxide (SiO_2) layer of a tunnel oxide passivated contact (TOPCon) solar cell. The passivation quality of crystalline Si (c-Si) with a stack of the ultra-thin SiN_x and n-type hydrogenated amorphous Si (a-Si:H) or microcrystalline Si (µc-Si:H), also formed by Cat-CVD, is significantly improved by annealing at 850 °C, probably due to the formation of a back surface field (BSF) layer. Cat-CVD SiN_x with thicknesses of up to 2.5 nm can have sufficient tunneling conduction. The ultra-thin SiN_x having functions of surface passivation and carrier tunneling, and the unification of the formation method for the tunnel SiN_x and conductive layers will lead to the realization of tunnel nitride passivated contact (TNPCon) solar cells.
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/18022
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Tunnel Nitride Passivated Contacts for Silicon Solar Cells Formed by Cat-CVD
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Veröffentlichung: | 2021 |
Medientyp: | Elektronische Ressource |
DOI: | 10.35848/1347-4065/abdccd |
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