Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
In: Science China - Information Sciences 66(2023), 219403; (2023)
Online
Elektronische Ressource
Ion-cutting technology is an ingenious solution to the high-quality heterogeneous integration of GaN thin films with CMOS-compatible Si(100) substrate, which provides a platform to combine GaN-based optoelectronics, high-frequency and high-power electronics with digital signal processing, logic computation, and control of Si(100) CMOS. Previously, we reported the fabrication of 2-inch GaN film on SiO2/Si(100) substrate (GaNOI) by the ion-cutting technology. In this study, we further study the defect evolution in the transferred GaN films, which is needed to promote the practical applications of the GaNOI material platform.
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Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
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Quelle: | Science China - Information Sciences 66(2023), 219403; (2023) |
Veröffentlichung: | 2023 |
Medientyp: | Elektronische Ressource |
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