A 1–11 GHz ultra-wideband LNA using M-derived inductive peaking circuit in UMC 65 nm CMOS
John Wiley and Sons Inc., 2017
Online
academicJournal
Zugriff:
A high-gain, low-power, and low-noise amplifier (LNA) is designed in UMC 65 nm radio frequency (RF)-CMOS technology for operation over the 1 to 11 GHz RF band. This LNA design is based on an m-derived inductive peaking circuit with a shunt feedback inverter. The m-derived inductive peaking circuit is placed between two shunt feedback inverters. Further, a split inductor topology is introduced in the circuit. The procedure for the integrating of an m-derived inductive peaking circuit in LNA is explained in detail. The proposed circuit achieves more than 14 dB of power gain over an ultra-wideband of 1 to 11 GHz. The measurement of the proposed LNA achieves a minimum of 2.5 dB of noise figure, and more than −8 dBm of third-order input intercept point, while consuming 11.3 mW of power. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:521–526, 2017. © 2017 Wiley Periodicals, Inc.
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A 1–11 GHz ultra-wideband LNA using M-derived inductive peaking circuit in UMC 65 nm CMOS
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Autor/in / Beteiligte Person: | Bhatt, D. ; Mukherjee, J. ; Redouté, Jean-Michel |
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Veröffentlichung: | John Wiley and Sons Inc., 2017 |
Medientyp: | academicJournal |
DOI: | 10.1002/mop.30336 |
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