Temperature Dependence of Electrical Resistivity of (<em>III, Mn</em>)<em>V</em> Diluted Magnetic Semiconductors
2019., 2019
Online
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In this work, a theory of temperature dependence of electrical resistivity is developed, with a particular emphasis on dilute magnetic semiconductors (DMSs). The approach is based on the equation of motion of the Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction and considers both spin and charge disorder. The formalism is applied to the specific case of Ga1−xMnxAs.Using the RKKY exchange interaction, the relaxation time τand the exchange interaction J are calculated. Then using spin-dependent relaxation time, electrical resistivity of the material is calculated. The electrical resistivity of Mn-doped III—V DMS is decreased with increasing temperature and magnetic impurity concentration.
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Temperature Dependence of Electrical Resistivity of (<em>III, Mn</em>)<em>V</em> Diluted Magnetic Semiconductors
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Autor/in / Beteiligte Person: | Tasisa Jira, Edosa Tasisa |
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Veröffentlichung: | 2019., 2019 |
Medientyp: | unknown |
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