Subthreshold CMOS transistors are largely immune to magnetic field effects when operated above 11 T
In: Concepts in Magnetic Resonance, Jg. 45 (2015-04-01), Heft 2, S. 97-98
Online
academicJournal
Titel: |
Subthreshold CMOS transistors are largely immune to magnetic field effects when operated above 11 T
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Autor/in / Beteiligte Person: | Höfflin, Jens ; Sander, Christian ; Gieschke, Pascal ; Greiner, Andreas ; Korvink, Jan G. |
Link: | |
Zeitschrift: | Concepts in Magnetic Resonance, Jg. 45 (2015-04-01), Heft 2, S. 97-98 |
Veröffentlichung: | 2015 |
Medientyp: | academicJournal |
ISSN: | 1546-6086 (print) |
DOI: | 10.1002/cmr.b.21284 |
Sonstiges: |
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