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The present invention involves a method for deposition of thin film and electrochemically active layered coatings for use as components including electrodes and solid electrolytes for electrochemical generation and storage devices including batteries, supercapacitors, fuel cell, solar cell and the like. According to the present invention, evaporation of the starting materials in a reactive gaseous medium is accomplished by means of a gas discharge electron gun with a cold cathode. The electron beam has a given specific power corresponding to the evaporation temperature of the starting material. Deposition of the evaporated starting material onto the substrate in a pressure controlled reactive gaseous medium is carried out at a controlled temperature and rate of condensate formation. This temperature is dependant on the partial pressure of the reactive gas. High condensation rates can be achieved, and the resulting condensed coating materials can have high density, making them ideal for use as electrodes in electrochemical generation and storage devices.

Titel:	Method for deposition of electrochemically active thin films and layered coatings
Autor/in / Beteiligte Person:	Shembel, Elena M. ; Tugay, Boris ; Demchyshyn, Anatolii ; Redko, Volodymyr ; Pastushkin, Tymofiy V. ; Denbnovetskyy, Stanislav ; Melnyk, Vitalyy ; Melnyk, Igoz ; Markevich, Alexandr
Link:	View record in USPTO Patent Applications (Volltext)
Veröffentlichung:	2010
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20100129564 Publication Date: May 27, 2010 Appl. No: 12/148758 Application Filed: April 22, 2008 Assignees: Enerize Corporation (Coral Springs, FL, US) Claim: 1. A method for producing thin film or layered coatings, wherein evaporation of an initial (starting) material that will comprise the deposited materials, in the form of compacted blanks, is effected by heating with a gas discharge electron gun with a cold cathode in a reactive gaseous medium while said starting material surface is scanned with a the resulting electron beam having a given specific power relative to the evaporation temperature of said starting materials, thus providing a given power distribution over the blank surface of said starting material, and wherein the resulting vapor stream of said starting material is subsequently deposited onto the substrate in a reactive pressure-controlled gaseous medium that is activated in the high-voltage glow discharge of the electron gun at a controlled temperature at which the condensate forms, said temperature being dependant on the partial pressure of the reactive gas. Claim: 2. A method for producing thin film materials as in claim 1, wherein the said thin film or coating is deposited under an atmosphere of the activated gas at the given pressure that provides compensation for the gas shortfall in the condensate composition. Claim: 3. A method for producing thin film materials as in claim 2, wherein the active gas is comprised of oxygen, compositions of sulphide or nitrogen. Claim: 4. A method for producing thin film materials as in claim 2, wherein the active gas partial pressure in the chamber for material deposition onto the substrate is automatically maintained at the 1.10−1-5.10−2 Pa by automatic adjustment of the pump-down rate by bleed-in of the reactive gas into the chamber, which is continuously pumped and is directly fed into the material evaporation/deposition zone and into the glow discharge area. Claim: 5. A method for producing thin film materials as in claim 1, wherein the vacuum chamber with the gas discharge gun are pumped down by means of vacuum pumps to 10−1-10−3 Pa. Claim: 6. A method for producing thin film materials as in claim 1, wherein the specific power rate on the evaporation surface is adjusted by means of a scanning electron beam controlled by a scanning coil, that directs the electron beam across the surface of the starting material (compacted blank) according to a given program that is effected by means of an electromagnetic control device, the power of the scanning beam is 500 W-2 kW and the scanning frequency of the electron scanning beam being in the range from approximately 0.3 Hz to 300 Hz. Claim: 7. A method for producing thin film materials as in claim 1, wherein the power of the electron beam is automatically controlled by changing pressure in the gun and the electron beam diameter is from 5 mm to 10 mm. Claim: 8. A method for producing thin film materials as in claim 1, wherein the temperature of the substrate onto which the physical deposition of the vapor stream of the materials is being carried out is maintained within a given range by means of a radiation heater as a function of the reactive gas pressure in the deposition zone and of the partial pressure of the reactive gas in the working chamber and the localization of the substrate heating is effected by using screens and substrate holders. Claim: 9. A method for producing thin film materials as in claim 1, wherein the compacted blanks of the starting materials are placed inside of a cooled ceramic crucible or of a cooled metallic crucible. Claim: 10. A method for producing thin film materials as in claim 1, wherein the substrates onto which the physical deposition of the vapor stream of materials is being carried out are made of ceramics or of metal and the thickness of the metal from which the substrate is made is from 2 μm to 200 μm. Claim: 11. A method for producing thin film materials as in claim 1, wherein the substrate onto which the vapor stream of materials is being deposited is held at an adjustable electrical potential relative to the properties of the materials which are deposited. Claim: 12. A method for producing thin film materials as in claim 1, wherein the coating deposition rate equals more than 10 μm/s and is a function of the material that is evaporated. Claim: 13. A method for producing thin film materials as in claim 1, wherein prior to evaporation of the material being vaporized, the substrate surface is subjected to ion cleaning. Claim: 14. A method for producing thin film materials as in claim 1, wherein the initial materials may be comprised of metal oxides, metal sulphides, metals, carbon, cabon compositions, silicon or silicon composition and the materials being deposited onto the substrate may be comprised of active electrode materials of power sources such as MoO3, FeS2, LiCoO2, LiMn2O4, MnO2, carbon and carbon compositions, solid inorganic electrolytes, including those of the Lipon® type, or vitreous substances based on a lithium-containing mixture of oxides, materials for solar cell such as silicon or silicon composition. Claim: 15. A method for producing thin film materials as in claim 1, wherein a multi-layer coating is applied onto the substrate, the first layer of multi-layer coating being a layer of an adhesive material or graphite. Current U.S. Class: 427/534 Current International Class: 23; 23

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Method for deposition of electrochemically active thin films and layered coatings