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Litho-litho-etch double patterning (LLE-DP) methods using silylation freeze technology are presented. The LLE-DP method using a silylation freeze reaction comprises providing a substrate with a first photoresist layer thereon. A first exposure process is performed defining a first latent image in a first photoresist. The first patterned structures on the substrate is developed and baked for photo-generated acid diffusion. The photo-generated acid is reacted with a silylation agent to freeze the first patterned structures. A second photoresist layer is formed overlying the substrate. A second lithography process is performed to create second patterned structures on the substrate. The first patterned structures and the second patterned structures are interlaced each other.

Titel:	LITHO-LITHO ETCH (LLE) DOUBLE PATTERNING METHODS
Autor/in / Beteiligte Person:	Wang, Yi-Ming ; Huang, Pei-Lin ; Tseng, Ying-Chung
Link:	View record in USPTO Patent Applications (Volltext)
Veröffentlichung:	2011
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20110081618 Publication Date: April 7, 2011 Appl. No: 12/574650 Application Filed: October 06, 2009 Assignees: NANYA TECHNOLOGY CORPORATION (Taoyuan, TW) Claim: 1. A litho-litho-etch double patterning (LLE-DP) method using a silylation freeze reaction, comprising: providing a substrate with a first photoresist layer thereon; performing a first lithography process to create first patterned structures on the substrate; performing a silylation freeze reaction on the first patterned structures; forming a second photoresist layer overlying the substrate; and performing a second lithography process to create second patterned structures on the substrate. Claim: 2. The LLE-DP method as claimed in claim 1, wherein the substrate comprises a single crystalline structure, an epitaxial substrate, a SiGe substrate, and a silicon on insulator (SOI) substrate. Claim: 3. The LLE-DP method as claimed in claim 1, wherein the step of performing the first lithography process comprises: performing an exposure process defining a first latent image in the first photoresist; and developing and baking the first patterned structures for photo-generated acid diffusion. Claim: 4. The LLE-DP method as claimed in claim 1, wherein the step of performing the silylation freeze process comprises reacting a silylation agent with the photo-generated acid. Claim: 5. The LLE-DP method as claimed in claim 4, wherein the silylation agent comprises hexamethyldisilazane (HMDS), trimethylchlorosilane (TMCS), or hexamethyldisilazane (HMDSZ). Claim: 6. The LLE-DP method as claimed in claim 1, wherein the step of performing the second lithography process comprises: performing an exposure process defining a second latent image in the second photoresist; and developing and baking the second photoresist layer to create the second patterned structures. Claim: 7. The LLE-DP method as claimed in claim 1, wherein the first patterned structures and the second patterned structures are interlaced each other. Claim: 8. A litho-litho-etch double patterning (LLE-DP) method using a silylation freeze reaction, comprising: providing a substrate with a first photoresist layer thereon; performing a first lithography process to create first patterned structures on the substrate; reacting a photo-generated acid with a silylation agent to freeze the first patterned structures; forming a second photoresist layer overlying the substrate; and performing a second lithography process to create second patterned structures on the substrate. Claim: 9. The LLE-DP method as claimed in claim 8, wherein the substrate comprises a single crystalline structure, an epitaxial substrate, a SiGe substrate, and a silicon on insulator (SOI) substrate. Claim: 10. The LLE-DP method as claimed in claim 8, wherein the step of performing the first lithography process comprises: performing an exposure process defining a first latent image in the first photoresist; and developing and baking the first patterned structures for photo-generated acid diffusion. Claim: 11. The LLE-DP method as claimed in claim 8, wherein the silylation agent comprises hexamethyldisilazane (HMDS), trimethylchlorosilane (TMCS), or hexamethyldisilazane (HMDSZ). Claim: 12. The LLE-DP method as claimed in claim 8, wherein the step of performing the second lithography process comprises: performing an exposure process defining a second latent image in the second photoresist; and developing and baking the second photoresist layer to create the second patterned structures. Claim: 13. The LLE-DP method as claimed in claim 8, wherein the first patterned structures and the second patterned structures are interlaced each other. Claim: 14. A litho-litho-etch double patterning (LLE-DP) method using a silylation freeze reaction, comprising: providing a substrate with a first photoresist layer thereon; performing a first exposure process defining a first latent image in a first photoresist; developing and baking the first patterned structures on the substrate for photo-generated acid diffusion; reacting a photo-generated acid with a vapor phase silylation agent to freeze the first patterned structures; forming a second photoresist layer overlying the substrate; and performing a second lithography process to create second patterned structures on the substrate. Claim: 15. The LLE-DP method as claimed in claim 14, wherein the substrate comprises a single crystalline structure, an epitaxial substrate, a SiGe substrate, and a silicon on insulator (SOI) substrate. Claim: 16. The LLE-DP method as claimed in claim 14, wherein the vapor phase silylation agent comprises hexamethyldisilazane (HMDS), trimethylchlorosilane (TMCS), or hexamethyldisilazane (HMDSZ). Claim: 17. The LLE-DP method as claimed in claim 14, wherein the step of performing the second lithography process comprises: performing a second exposure process defining a second latent image in the second photoresist; and developing and baking the second photoresist layer to create the second patterned structures. Claim: 18. The LLE-DP method as claimed in claim 14, wherein the first patterned structures and the second patterned structures are interlaced each other. Current U.S. Class: 430/325 Current International Class: 03

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LITHO-LITHO ETCH (LLE) DOUBLE PATTERNING METHODS