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A module includes a DCB substrate and a discrete device mounted on the DCB substrate, wherein the discrete device comprises a leadframe, a semiconductor chip mounted on the leadframe and an encapsulation material covering the semiconductor chip.

Titel:	Module Including a Discrete Device Mounted on a DCB Substrate
Link:	View record in USPTO Patent Applications (Volltext)
Veröffentlichung:	2013
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20130161801 Publication Date: June 27, 2013 Appl. No: 13/336248 Application Filed: December 23, 2011 Assignees: Infineon Technologies AG (Neubiberg, DE) Claim: 1. A module, comprising: a direct copper bonding (DCB) substrate; and a discrete device mounted on the DCB substrate, wherein the discrete device comprises: a leadframe; a semiconductor chip mounted on the leadframe; and an encapsulation material covering the semiconductor chip. Claim: 2. The module of claim 1, further comprising: a metal carrier, wherein the DCB substrate is mounted on the metal carrier; and a housing, wherein the housing is arranged on the metal carrier and accommodates the DCB substrate and the discrete device. Claim: 3. The module of claim 2, further comprising a metal clip, wherein one end of the metal clip is attached to the DCB substrate and another end of the metal clip is arranged outside the housing. Claim: 4. The module of claim 3, wherein the end of the metal clip that is arranged outside the housing is an external contact element. Claim: 5. The module of claim 1, wherein the semiconductor chip has a first face, and a second face opposite to the first face, wherein a first electrode is arranged on the first face and a second electrode is arranged on the second face. Claim: 6. The module of claim 1, wherein the semiconductor chip comprises a substrate made of silicon carbide. Claim: 7. The module of claim 1, further comprising a further semiconductor chip mounted on the DCB substrate. Claim: 8. The module of claim 7, wherein the semiconductor chip comprises a substrate made of silicon carbide and the further semiconductor chip comprises a substrate made of silicon. Claim: 9. The module of claim 1, further comprising a layer of silicone gel embedding the discrete device. Claim: 10. The module of claim 9, further comprising a layer of epoxy resin deposited on the layer of silicone gel. Claim: 11. The module of claim 1, further comprising a further discrete device mounted on the DCB substrate. Claim: 12. The module of claim 1, wherein the DCB substrate comprises a ceramic layer enclosed by two copper layers. Claim: 13. The module of claim 1, wherein the semiconductor chip is one of a power MOSFET, IGBT, JFET and power bipolar transistor. Claim: 14. The module of claim 1, wherein the discrete device is a surface amount device (SMD). Claim: 15. A module, comprising: a metal carrier; a direct copper bonding (DCB) substrate mounted on the metal carrier; a surface mount device (SMD) mounted on the DCB substrate; a housing, wherein the housing is arranged on the metal carrier and accommodates the DCB substrate and the SMD; and at least one metal clip, wherein one end of the at least one metal clip is attached to the DCB substrate and another end of the at least one metal clip is arranged outside the housing. Claim: 16. A method for manufacturing a module, the method comprising: providing a discrete device comprising a semiconductor chip; and mounting the discrete device on a direct copper bonding (DCB) substrate; and mounting at least one metal clip on the DCB substrate, wherein a portion of the at least one metal clip is an external contact element of the module. Claim: 17. The method of claim 16, wherein the discrete device comprises electrical terminals, the DCB substrate comprises a structured copper layer and the mounting the discrete device on the DCB substrate comprises attaching the electrical terminals of the discrete device to the structured copper layer of the DCB substrate. Claim: 18. The method of claim 16, further comprising: mounting the DCB substrate on a metal carrier; and placing a housing on the metal carrier, wherein the housing accommodates the DCB substrate and the discrete device. Claim: 19. The method of claim 16, further comprising manufacturing the discrete device before mounting the discrete device on the DCB substrate. Claim: 20. The method of claim 19, wherein manufacturing the discrete device comprises: providing a leadframe; mounting the semiconductor chip on the leadframe; and covering the semiconductor chip with an encapsulation material. Claim: 21. The method of claim 16, further comprising covering the discrete device with a silicone gel after mounting the discrete device on the DCB substrate. Claim: 22. The method of claim 21, further comprising depositing an epoxy resin on the silicone gel. Claim: 23. The method of claim 16, wherein the semiconductor chip is one of a power MOSFET, IGBT, JFET and power bipolar transistor. Claim: 24. The method of claim 16, wherein the discrete device is a surface mount device (SMD). Claim: 25. A method, comprising: providing a metal carrier; mounting a direct copper bonding (DCB) substrate on the metal carrier; mounting a surface mount device (SMD) on the DCB substrate; attaching a first portion of at least one metal clip to the DCB substrate; and placing a housing on the metal carrier, wherein the housing accommodates the DCB substrate and the SMD and wherein a second portion of the at least one metal clip is arranged outside the housing. Current U.S. Class: 257/668 Current International Class: 01; 05; 01

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Module Including a Discrete Device Mounted on a DCB Substrate