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A method for formulating a CIGS nanoparticle-based ink, which can be processed to form a thin film with a crack-free limit (CFL) of 500 nm or greater, comprises combining CIGS nanoparticles and binary chalcogenide nanoparticles in a solvent.

Titel:	CIGS Nanoparticle Ink Formulation with a High Crack-Free Limit
Link:	View record in USPTO Patent Applications (Volltext)
Veröffentlichung:	2018
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20180355201 Publication Date: December 13, 2018 Appl. No: 16/001698 Application Filed: June 06, 2018 Claim: 1. An ink formulation having a crack-free limit (CFL) of 500 nm or greater, comprising: a CIGS nanoparticle; a binary chalcogenide nanoparticle; and a solvent. Claim: 2. The ink formulation recited in claim 1 wherein the CIGS nanoparticle has the formula: CuwInxGa1-xSeyS2-y, where 0.1≤w≤2; 0≤x≤1; and 0≤y≤2. Claim: 3. The ink formulation recited in claim 1 wherein the binary chalcogenide nanoparticle has the formula: MaXb where M is a Group 13 element, X is a Group 16 element, and a and b are >0.5. Claim: 4. The ink formulation recited in claim 1 wherein the binary chalcogenide nanoparticle is InS. Claim: 5. The ink formulation recited in claim 1 wherein the binary chalcogenide nanoparticle is InSe. Claim: 6. The ink formulation recited in claim 1 wherein the binary chalcogenide nanoparticle is GaS. Claim: 7. The ink formulation recited in claim 1 wherein the binary chalcogenide nanoparticle is GaSe. Claim: 8. The ink formulation recited in claim 1 wherein the CIGS nanoparticle has a copper-rich stoichiometry. Claim: 9. The ink formulation recited in claim 1 wherein the atomic ratio Cu/(In+Ga) of the CIGS nanoparticle is greater than one. Claim: 10. The ink formulation recited in claim 1 wherein the solvent is toluene. Claim: 11. The ink formulation recited in claim 1 wherein the CIGS nanoparticle is capped with 1-octanethiol and oleylamine. Claim: 12. The ink formulation recited in claim 1 wherein the ink formulation is free of any added binder. Claim: 13. An ink formulation having a crack-free limit (CFL) of 500 nm or greater, consisting essentially of: CIGS nanoparticles dissolved in toluene wherein the atomic ratio Cu/(In+Ga) of the CIGS nanoparticles is greater than one; InS nanoparticles dissolved in toluene; and GaS nanoparticles dissolved in toluene. Claim: 14. A process for preparing a CIGS-based photovoltaic device comprising: a) dissolving/dispersing CIGS nanoparticles in a solvent, to form an ink, A; b) dissolving/dispersing binary indium chalcogenide nanoparticles in a solvent to form an ink, B; c) dissolving/dispersing binary gallium chalcogenide nanoparticles in a solvent to form an ink, C; d) combining inks A, B and C to form an ink, D; e) depositing the ink, D, on a substrate to form a film; f) annealing the film in an inert atmosphere; g) repeating steps e) and f), until the annealed film reaches a desired thickness. Claim: 15. The process recited in claim 14 wherein the CIGS nanoparticles have the formula: CuwInxGa1-xSeyS2-y, where 0.1≤w≤2; 0≤x≤1; and 0≤y≤2. Claim: 16. The process recited in claim 14 wherein the solvent is toluene. Claim: 17. The process recited in claim 14 wherein the binary indium chalcogenide nanoparticles are selected from the group consisting of InS and InSe. Claim: 18. The process recited in claim 14 wherein the binary gallium chalcogenide nanoparticles are selected from the group consisting of GaS and GaSe. Claim: 19. The process recited in claim 14 wherein steps e) and f) are repeated only once and the annealed film reaches a thickness of at least 1 μm. Claim: 20. The process recited in claim 14 wherein the substrate is a molybdenum-coated glass substrate. Current International Class: 09; 01; 01; 09; 09

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CIGS Nanoparticle Ink Formulation with a High Crack-Free Limit