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DIELECTRIC FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR, AND ELECTRONIC CIRCUIT BOARD

2020
Online Patent

Titel:
DIELECTRIC FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR, AND ELECTRONIC CIRCUIT BOARD
Link:
Veröffentlichung: 2020
Medientyp: Patent
Sonstiges:
  • Nachgewiesen in: USPTO Patent Applications
  • Sprachen: English
  • Document Number: 20200312484
  • Publication Date: October 1, 2020
  • Appl. No: 16/819073
  • Application Filed: March 14, 2020
  • Assignees: TDK Corporation (Tokyo, JP)
  • Claim: 1. A dielectric film comprising an oxide having a perovskite structure, wherein the oxide comprises: (1) Bi, Na and Ti; (2) at least one of Ba and Ca; and (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y, and when ratios of the numbers of atoms of Bi, Ba and Ca to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide are represented by XBi, XBa and XCa, respectively, the ratios satisfy 0.2≤XBi/(XBa+XCa)≤5.
  • Claim: 2. The dielectric film according to claim 1, wherein when a ratio of the number of atoms of Na to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide is represented by XNa, the ratio satisfies 0.9XBi≤XNa≤1.1XBi.
  • Claim: 3. The dielectric film according to claim 1, wherein a ratio of the number of atoms of Ti to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide is 80% or more and 120% or less.
  • Claim: 4. The dielectric film according to claim 1, wherein a ratio of the number of atoms of Ln to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide is 0.5 to 20%.
  • Claim: 5. A dielectric film comprising an oxide having a perovskite structure, wherein the oxide comprises: (1) Bi, K and Ti; (2) at least one selected from the group consisting of Ba, Sr and Ca; and (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y, and when ratios of the numbers of atoms of Bi, Ba, Sr and Ca to the total of the numbers of atoms of Bi, K, Ba, Sr and Ca in the oxide are represented by XBi, XBa, Xsr and XCa, respectively, the ratios satisfy 0.2≤XBi/(XBa+XSr+XCa)≤5.
  • Claim: 6. The dielectric film according to claim 5, wherein when a ratio of the number of atoms of K to the total of the numbers of atoms of Bi, K, Ba, Sr and Ca in the oxide is represented by XK, the ratio satisfies 0.9XBi≤XK≤1.1XBi.
  • Claim: 7. The dielectric film according to claim 5, wherein a ratio of the number of atoms of Ti to the total of the numbers of atoms of Bi, K, Ba, Sr and Ca in the oxide is 80% or more and 120% or less.
  • Claim: 8. The dielectric film according to claim 5, wherein a ratio of the number of atoms of Ln to the total of the numbers of atoms of Bi, K, Ba, Sr and Ca in the oxide is 0.5 to 20%.
  • Claim: 9. An electronic component comprising the dielectric film according to claim 1.
  • Claim: 10. A thin film capacitor comprising the dielectric film according to claim 1.
  • Claim: 11. An electronic circuit board comprising the dielectric film according to claim 1.
  • Claim: 12. An electronic circuit board comprising the electronic component according to claim 9.
  • Claim: 13. An electronic circuit board comprising the thin film capacitor according to claim 10.
  • Claim: 14. An electronic component comprising the dielectric film according to claim 5.
  • Claim: 15. A thin film capacitor comprising the dielectric film according to claim 5.
  • Claim: 16. An electronic circuit board comprising the dielectric film according to claim 5.
  • Claim: 17. An electronic circuit board comprising the electronic component according to claim 14.
  • Claim: 18. An electronic circuit board comprising the thin film capacitor according to claim 15.
  • Current International Class: 01; 01; 01; 05; 01

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