Einzeltreffer — DigiBib

An object of the present disclosure is to accurately simulate the operation of a CSTBT. The simulation model of a CSTBT includes a MOSFET, a diode whose cathode is connected to the drain of the MOSFET, capacitance CGE connected between a source and a gate of the MOSFET, capacitance CCG connected between a gate of the MOSFET and an anode of the diode, capacitance CCE connected between a source of the MOSFET and the anode of the diode, capacitance CDG connected between the drain and the gate of the MOSFET, and a behavioral power source VDG connected in series to the capacitance CDG between the drain and the gate of the MOSFET. The behavioral power source VDG performs a switching operation when gate-emitter voltage VGE of the CSTBT reaches a predetermined threshold value.

Titel:	SIMULATION MODEL AND SIMULATION METHOD
Link:	View record in USPTO Patent Applications (Volltext)
Veröffentlichung:	2022
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20220222410 Publication Date: July 14, 2022 Appl. No: 17/506974 Application Filed: October 21, 2021 Assignees: Mitsubishi Electric Corporation (Tokyo, JP) Claim: 1. A simulation model for simulation evaluating characteristics of a CSTBT being a trench gate type IGBT having a carrier storage layer, comprising: a MOSFET: a diode whose cathode is connected to a drain of the MOSFET; capacitance CGE connected between a source and a gate of the MOSFET and representing gate-emitter capacitance of the CSTBT; capacitance CCG connected between a gate of the MOSFET and an anode of the diode and representing gate-collector capacitance of the CSTBT; capacitance CCE connected between a source of the MOSFET and the anode of the diode and representing collector-emitter capacitance of the CSTBT; capacitance CDG connected between the drain and the gate of the MOSFET and representing drain-gate capacitance of the CSTBT; and a behavioral power source VDG connected in series to the capacitance CDG between the drain and the gate of the MOSFET and representing drain-gate voltage of the CSTBT, wherein the behavioral power source VDG performs a switching operation when gate-emitter voltage VGE of the CSTBT reaches a predetermined threshold value. Claim: 2. The simulation model according to claim 1, wherein the capacitance CCG varies depending on the gate-collector voltage VCG of the CSTBT. Claim: 3. The simulation model according to claim 2, wherein the capacitance CCG is represented by Ca(1−Ct*2/π) arc tan {(VCG−Vt)Vc}, with Ca, Ct, Vt, and Vc as constants and the gate-collector voltage VCG of the CSTBT as variables. Claim: 4. The simulation model according to claim 1, wherein the capacitance CCG is represented by a parallel connection of a first behavioral current source and a resistor, and, in a circuit composed of a series connection of a reference resistor and a reference capacitance, a second behavioral current source connected to both ends of the series connection, and a behavioral voltage source representing the gate-collector voltage VCG of the CSTBT connected to both ends of the series connection, a current flowing through the second behavioral current source is represented by time derivative of the capacitance CCG, the reference capacitance, and the gate-collector voltage VCG of the CSTBT, and a current flowing through the behavioral voltage source corresponds to a current of the first behavioral current source. Claim: 5. The simulation model according to claim 1, wherein the capacitance CCE varies depending on a collector-emitter voltage VCE of the CSTBT. Claim: 6. The simulation model according to claim 1, wherein the capacitance CGE varies depending on the gate-emitter voltage VGE of the CSTBT. Claim: 7. A simulation model of a 6in1 module having the CSTBT, wherein the simulation model according to claim 1 is applied to the CSTBT of the 6in1 module. Claim: 8. The simulation model according to claim 1, further comprising a gate drive circuit that applies a voltage to the gate of the MOSFET. Claim: 9. The simulation model comprising: a power supply circuit model being a simulation model of a power supply circuit; an LISN model provided in a following stage of the power supply circuit model and being a simulation model of an LISN; a first cable model provided in a following stage of the LISN model and being a simulation model of a cable; a rectifier model provided in a following stage of the first cable model and being a simulation model of a rectifier and a smoothing capacitor; a simulation model according to claim 7, provided in a following stage of the rectifier model; a second cable model provided in a following stage of the simulation model according to claim 7 and being a simulation model of a cable; and a motor model provided in a following stage of the second cable model and being a simulation model of a motor. Claim: 10. A simulation method for evaluating characteristics of a CSTBT being a trench gate type IGBT having a carrier storage layer, wherein the simulation method evaluates characteristics of the CSTBT using a simulation model includes a diode whose cathode is connected to a drain of the MOSFET, capacitance CGE connected between a source and a gate of the MOSFET and representing gate-emitter capacitance of the CSTBT, capacitance CCG connected between a gate of the MOSFET and an anode of the diode and representing gate-collector capacitance of the CSTBT, capacitance CCE connected between a source of the MOSFET and the anode of the diode and representing collector-emitter capacitance of the CSTBT, capacitance CDG connected between the drain and the gate of the MOSFET and representing drain-gate capacitance of the CSTBT, and a behavioral power source VDG connected in series to the capacitance CDG between the drain and the gate of the MOSFET and representing drain-gate voltage of the CSTBT, and the behavioral power source VDG performs a switching operation when gate-emitter voltage VGE of the CSTBT reaches a predetermined threshold value. Current International Class: 06; 01; 03; 03

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SIMULATION MODEL AND SIMULATION METHOD