Einzeltreffer — DigiBib

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration CPd (atomic %) to an Ni concentration CNi (atomic %), CPd/CNi, for all measurement points in the coating layer, and the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3× or less is 50% or more relative to the total number of measurement points in the coating layer.

Titel:	BONDING WIRE FOR SEMICONDUCTOR DEVICES
Link:	View record in USPTO Patent Applications (Volltext)
Veröffentlichung:	2023
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20230335528 Publication Date: October 19, 2023 Appl. No: 18/211069 Application Filed: June 16, 2023 Claim: 1. A bonding wire for semiconductor devices, the bonding wire comprising: a core material of Cu or Cu alloy; and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material, wherein in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration CPd (atomic %) to an Ni concentration CNi (atomic %), CPd/CNi, for all measurement points in the coating layer, and a total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3× or less is 50% or more relative to a total number of measurement points in the coating layer. Claim: 2. The bonding wire according to claim 1, wherein the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.2× or less is 50% or more relative to the total number of measurement points in the coating layer. Claim: 3. The bonding wire according to claim 1, wherein when linearly approximating CPd or CNi by the method of least squares for all measurement points in the coating layer, a difference between a maximum value and a minimum value of the obtained approximate straight line in a depth range of the coating layer is 20 atomic % or less. Claim: Claim: 5. The bonding wire according to claim 1, wherein the bonding wire contains Au at a surface thereof. Claim: 6. The bonding wire according to claim 5, wherein a concentration of Au at the surface of the wire is 10 atomic % or more and 90 atomic % or less. Claim: Claim: 8. The bonding wire according to claim 1, wherein when forming a free air ball (FAB: Free Air Ball) by using the wire and then measuring crystal orientations in a cross-section of the FAB perpendicular to a compression-bonding direction, a proportion of a crystal orientation <100> angled at 15° or less to the compression-bonding direction is 30% or more. Claim: 9. The bonding wire according to claim 8, wherein the proportion of the crystal orientation <100> angled at 15° or less to the compression-bonding direction is 50% or more. Claim: 10. The bonding wire according claim 1, wherein the bonding wire contains one or more elements selected from the group consisting of B, P and Mg (hereinafter referred to as a “first additive element”), and a total concentration of the first additive element is 1 ppm by mass or more and 100 ppm by mass or less relative to the entire wire. Claim: 11. The bonding wire according to claim 1, wherein the bonding wire contains one or more elements selected from the group consisting of Se, Te, As and Sb (hereinafter referred to as a “second additive element”), and a total concentration of the second additive element is 1 ppm by mass or more and 100 ppm by mass or less relative to the entire wire. Claim: 12. The bonding wire according to claim 1, wherein the bonding wire contains one or more elements selected from the group consisting of Ga, Ge and In (hereinafter referred to as a “third additive element”), and a total concentration of the third additive element is 0.011% by mass or more and 1.5% by mass or less relative to the entire wire. Claim: 13. A semiconductor device comprising the bonding wire according to claim 1. Current International Class: 01

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BONDING WIRE FOR SEMICONDUCTOR DEVICES