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DUAL FGL AND DUAL SPL SPINTRONIC DEVICE TO REDUCE PERPENDICULAR FIELD AT WRITING LOCATION

2024
Online Patent

Titel:
DUAL FGL AND DUAL SPL SPINTRONIC DEVICE TO REDUCE PERPENDICULAR FIELD AT WRITING LOCATION
Link:
Veröffentlichung: 2024
Medientyp: Patent
Sonstiges:
  • Nachgewiesen in: USPTO Patent Applications
  • Sprachen: English
  • Document Number: 20240144962
  • Publication Date: May 2, 2024
  • Appl. No: 18/226109
  • Application Filed: July 25, 2023
  • Assignees: Western Digital Technologies, Inc. (San Jose, CA, US)
  • Claim: 1. A magnetic recording head comprising: a shield; a main pole; and a spintronic device disposed between a shield and a main pole, the spintronic device comprising: a first spin kill layer disposed adjacent to the shield; a first spin polarization layer disposed between the first spin kill layer and the main pole; a first field generation layer disposed between the first spin polarization layer and the main pole; a second spin polarization layer disposed between the first field generation layer and the main pole; a second spin kill layer disposed between the second spin polarization layer and the main pole; a first negative beta material layer disposed between the second spin kill layer and the main pole; and a second field generation layer disposed between the first negative beta material layer and the main pole.
  • Claim: 2. The magnetic recording head of claim 1, wherein the spintronic device further comprises a second negative beta material layer disposed between and in contact with the second spin polarization layer and the second spin kill layer.
  • Claim: 3. The magnetic recording head of claim 2, wherein the first spin kill layer is disposed on a hot seed layer or a hot seed notch, wherein the hot seed layer is disposed on the shield, and wherein the hot seed notch is disposed on the hot seed layer.
  • Claim: 4. The magnetic recording head of claim 3, wherein the spintronic device further comprises a third negative beta material layer disposed between and in contact with the first spin kill layer and the hot seed layer or the hot seed notch.
  • Claim: 5. The magnetic recording head of claim 4, wherein the spintronic device further comprises a fourth negative beta material layer disposed between the first spin kill layer and the first spin polarization layer.
  • Claim: 6. The magnetic recording head of claim 5, wherein the first, second, third, and fourth negative beta material layers each individually comprises FeCr and has a thickness of about 1 nm.
  • Claim: 7. The magnetic recording head of claim 1, wherein the spintronic device further comprises: a first spacer layer disposed between and in contact with the first spin polarization layer and the first field generation layer; a second spacer layer disposed between and in contact with the first field generation layer and the second spin polarization layer; and a third spacer layer disposed between the second field generation layer and the main pole.
  • Claim: 8. The magnetic recording head of claim 1, wherein the first and second spin kill layers each comprises a non-magnetic material having a resistivity greater than about 100 nano-Ohm·m.
  • Claim: 9. The magnetic recording head of claim 8, wherein the non-magnetic material is Cr.
  • Claim: 10. A magnetic recording device comprising the magnetic recording head of claim 1, the magnetic recording device configured to flow a current from the shield through the spintronic device to the main pole.
  • Claim: 11. A magnetic recording head comprising: a shield; a main pole; and a spintronic device disposed between the shield and a main pole, the spintronic device comprising: a first spin kill layer disposed on the main pole; a first spin polarization layer disposed on the first spin kill layer; a first field generation layer disposed over the first spin polarization layer; a second spin polarization layer disposed over the first field generation layer; a second spin kill layer disposed on the second spin polarization layer; and a second field generation layer disposed between the second spin kill layer and the shield.
  • Claim: 12. The magnetic recording head of claim 11, wherein the spintronic device further comprises a first negative beta material layer disposed between the main pole and the first spin kill layer.
  • Claim: 13. The magnetic recording head of claim 12, wherein the spintronic device further comprises a second negative beta material layer disposed between the first spin kill layer and the first spin polarization layer.
  • Claim: 14. The magnetic recording head of claim 13, wherein the spintronic device further comprises: a third negative beta material layer disposed between the second field generation layer and the second spin kill layer; and a fourth negative beta material layer disposed between the second spin polarization layer and the second spin kill layer, wherein the first, second, third, and fourth negative beta material layers each individually has a thickness of about 1 nm.
  • Claim: 15. The magnetic recording head of claim 14, wherein the first, second, third, and fourth negative beta material layers each individually comprises FeCr, and wherein the first and second spin kill layers each individually comprises a non-magnetic material having a resistivity greater than about 100 nano-Ohm·m.
  • Claim: 16. The magnetic recording head of claim 11, wherein the spintronic device further comprises: a first spacer layer disposed between the first field generation layer and the first spin kill layer; a second spacer layer disposed between the first field generation layer and the second spin polarization layer; and a third spacer layer disposed between the second field generation layer and the shield.
  • Claim: 17. A magnetic recording device comprising the magnetic recording head of claim 11, the magnetic recording device configured to flow a current from the main pole through the spintronic device to the shield.
  • Claim: 18. A magnetic recording device, comprising: a magnetic recording head, the magnetic recording head comprising: a main pole; a shield; and a spintronic device disposed between the main pole and the shield, the spintronic device comprising: a first spin kill layer; a first spin polarization layer; a first field generation layer; a second spin polarization layer; a second spin kill layer; a second field generation layer; and one or more negative beta material layers comprising FeCr; and means for flowing a current from the main pole through the spintronic device to the shield.
  • Claim: 19. The magnetic recording device of claim 18, wherein the one or more negative beta material layers are disposed in contact with either the first spin kill layer or the second spin kill layer.
  • Claim: 20. The magnetic recording device of claim 18, wherein the spintronic device further comprises one or more spacer layers, the one or more spacer layers being disposed in contact with either the first field generation layer or the second field generation layer.
  • Claim: 21. The magnetic recording device of claim 18, wherein the one or more negative beta material layers each has a thickness of about 1 nm, and wherein the first spin kill layer and the second spin kill layer each individually comprises a non-magnetic material having a resistivity greater than about 100 nano-Ohm·m.
  • Claim: 22. The magnetic recording device of claim 18, wherein the first spin kill layer is disposed on the main pole, the first spin polarization layer is disposed on the first spin kill layer, the first field generation layer is disposed over the first spin polarization layer, the second spin polarization layer is disposed over the first field generation layer, the second spin kill layer is disposed on the second spin polarization layer, the second field generation layer is disposed between the second spin kill layer and the shield, and the one or more negative beta material layers are disposed between the main pole and the second field generation layer.
  • Current International Class: 11

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