SINGLE CRYSTALLINE SILICON STACK FORMATION AND BONDING TO A CMOS WAFER
2024
Online
Patent
Systems, methods, and apparatus are provided for single crystalline silicon stack formation and bonding to a complementary metal oxide semiconductor (CMOS) wafer for formation of vertical three dimensional (3D) memory. An example method for forming arrays of vertically stacked layers for formation of memory cells includes providing a silicon substrate, forming a layer of single crystal silicon germanium onto a surface of the substrate, epitaxially growing the silicon germanium to form a thicker silicon germanium layer, forming a layer of single crystal silicon onto a surface of the silicon germanium, epitaxially growing the silicon germanium to form a thicker silicon layer, and forming, in repeating iterations, layers of silicon germanium and silicon to form a vertical stack of alternating silicon and silicon germanium layers.
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SINGLE CRYSTALLINE SILICON STACK FORMATION AND BONDING TO A CMOS WAFER
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Veröffentlichung: | 2024 |
Medientyp: | Patent |
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