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A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.

Titel:	Substrate for growing electro-optical single crystal thin film and method of manufacturing the same
Autor/in / Beteiligte Person:	Abe, Yoshihisa ; Suzuki, Shunichi ; Nakanishi, Hideo ; Komiyama, Jun
Link:	View record in USPTO Patent Grants (Volltext)
Veröffentlichung:	2007
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Grants Sprachen: English Patent Number: 7,262,485 Publication Date: August 28, 2007 Appl. No: 11/174610 Application Filed: July 06, 2005 Assignees: Covalent Materials Corporation (Tokyo, JP) Claim: 1. A substrate for epitaxially growing an electro-optical single crystal thin film, wherein two or more layers of buffer layers are formed which buffer lattice mismatch between Si and the electro-optical single crystal thin film on an Si (001) substrate, wherein said buffer layer is constituted by an SrTiO 3 (STO) single-crystal layer and a BaTiO 3 (BTO) single-crystal layer which are formed in order on the Si (001) substrate. Claim: 2. The substrate for growing the electro-optical single crystal thin film according to claim 1 , wherein a mixed crystal layer of STO and BTO is interposed between said STO single crystal layer and BTO single crystal layer. Claim: 3. The substrate for growing the electro-optical single crystal thin film according to claim 1 , wherein said buffer layer is constituted by an STO single crystal layer and a mixed crystal layer of STO and BTO which are formed in order on the Si (001) substrate. Claim: 4. The substrate for growing the electro-optical single crystal thin film according to claim 1 , wherein said electro-optical single crystal thin film is BTO. Claim: 5. A method of manufacturing a substrate for epitaxially growing an electro-optical single crystal thin film, wherein two or more layers of buffer layers which buffer lattice mismatch between Si and the electro-optical single crystal thin film are stacked in order on an Si (001) substrate by way of epitaxial growth, wherein said buffer layer is constituted by an SrTiO 3 (STO) single crystal layer and a BaTiO 3 (BTO) single crystal layer which are stacked in order on the Si (001) substrate by way of epitaxial growth. Claim: 6. The method of manufacturing the substrate for growing the electro-optical single crystal thin film according to claim 5 , wherein a mixed crystal layer of STO and BTO is stacked on STO single crystal layer by way of epitaxial growth before epitaxially growing said BTO single crystal layer. Claim: 7. The method of manufacturing the substrate for growing the electro-optical single crystal thin film according to claim 5 , wherein said buffer layer is constituted by an STO single crystal layer and a mixed crystal layer of STO and BTO which are stacked in order on the Si (001) substrate by way of epitaxial growth. Current U.S. Class: 257/617 Patent References Cited: 6605151 August 2003 Wessels et al. ; 6800133 October 2004 Kim et al. ; 2002/0179935 December 2002 Irwin ; 2002/0197489 December 2002 Lee et al. ; 2003/0015729 January 2003 Bosco et al. ; 2003/0020089 January 2003 Yu et al. ; 2003/0022431 January 2003 Yu et al. ; 2003/0160176 August 2003 Vispute et al. ; 2004/0079285 April 2004 Li et al. ; 2004/0164315 August 2004 Demkov ; 2004/0262631 December 2004 Fitzgerald ; 2005/0037556 February 2005 Grutzmacher ; 2006/0011925 January 2006 Bader et al. ; 2006/0121695 June 2006 Ueda et al. ; 2006/0138508 June 2006 Shimizu et al. ; 2006/0157685 July 2006 Ponomarev ; 2006/0169987 August 2006 Miura et al. ; 2006/0208257 September 2006 Branz et al. ; 01-152770 June 1989 Other References: C.H. Lei et al.; “Microstructure and Orientation Relations of BaTiO3/MgO/YSZ Multilayers Deposited on Si(0 0 1) Substrates by Laser Ablation”, Journal of Crystal Growth, vol. 24, pp. 137-144, 1997. cited by other ; Sangsab Kim, “Preparation and Characterization of BaTiO3 Thin Films on MgO- Buffered Si(100) Substrates by RF Sputtering”, J. Mater. Res., vol. 12, No. 4, Apr. 1997, pp. 1152-1159. cited by other Primary Examiner: Ngô, Ngân V. Attorney, Agent or Firm: Foley & Lardner LLP

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Substrate for growing electro-optical single crystal thin film and method of manufacturing the same