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- Nachgewiesen in: USPTO Patent Grants
- Sprachen: English
- Patent Number: 7,786,605
- Publication Date: August 31, 2010
- Appl. No: 11/859776
- Application Filed: September 23, 2007
- Assignees: Micron Technology, Inc. (Boise, ID, US)
- Claim: 1. A semiconductor component comprising: a semiconductor substrate having a circuit side, a back side, an integrated circuit, and a substrate contact in electrical communication with the integrated circuit comprising a pad having a peripheral outline; a through wire interconnect comprising a via through a first portion of the substrate contact within the peripheral outline and the semiconductor substrate to the back side, a wire in the via, a contact on the wire in the via proximate to the back side, a bonded connection between the wire and a second portion of the substrate contact, and a bonding member on the wire and the substrate contact; and a second substrate on the semiconductor substrate bonded to the through wire interconnect.
- Claim: 2. The semiconductor component of claim 1 wherein the substrate contact comprises a device bond pad or a redistribution pad.
- Claim: 3. The semiconductor component of claim 1 wherein the second substrate is bonded to the contact or to the bonding member.
- Claim: 4. The semiconductor component of claim 1 wherein the first portion comprises a first corner of the substrate contact and the second portion comprises a second corner of the substrate contact.
- Claim: 5. The semiconductor component of claim 1 wherein the wire comprises a ribbon wire, a compressed wire, or a coaxial wire.
- Claim: 6. The semiconductor component of claim 1 wherein the bonding member comprises a stud bump or a double bump.
- Claim: 7. The semiconductor component of claim 1 wherein the peripheral outline has a selected length of from 50 μm to 200 μm and a selected width of from 50 μm to 200 μm.
- Claim: 8. The semiconductor component of claim 1 wherein the substrate contact comprises a stack comprising aluminum-nickel-gold, aluminum-nickel-solder or copper-palladium.
- Claim: 9. A semiconductor component comprising: a semiconductor substrate having a first side, a second side, an integrated circuit and a substrate contact on the first side in electrical communication with the integrated circuit; a through wire interconnect on the semiconductor substrate configured to provide a conductive path from the substrate contact to the second side and a structure for bonding to the semiconductor substrate, the through wire interconnect comprising a via through the substrate contact and the semiconductor substrate to the second side, a wire in the via, a contact on the wire in the via proximate to the second side and a bonded connection between the wire and the substrate contact; and a second substrate on the semiconductor substrate bonded to the through wire interconnect.
- Claim: 10. The semiconductor component of claim 9 wherein the semiconductor substrate comprises a first semiconductor die and the second substrate comprises a second semiconductor die.
- Claim: 11. The semiconductor component of claim 10 wherein the first semiconductor die comprises a thinned die and the second semiconductor die comprises a bumped die.
- Claim: 12. The semiconductor component of claim 11 wherein the bumped die includes a bump bonded to the contact on the through wire interconnect.
- Claim: 13. The semiconductor component of claim 9 further comprising a dielectric material in the via surrounding the wire.
- Claim: 14. The semiconductor component of claim 9 wherein the contact on the wire comprises a ball on an end of the wire.
- Claim: 15. The semiconductor component of claim 9 wherein the contact on the wire comprises an exposed surface on an end of the wire.
- Claim: 16. The semiconductor component of claim 9 wherein the bonded connection comprises a ball bond or a wedge bond.
- Claim: 17. The semiconductor component of claim 9 further comprising a bonding member on the bonded connection.
- Claim: 18. A semiconductor component comprising: a first semiconductor die having a first side, a plurality of integrated circuits, a first contact on the first side in electrical communication with the integrated circuits, and a second side; a via in the first contact extending from the first side to the second side; a wire in the via having a second contact thereon proximate to the second side; a bonded connection between the wire and the first contact; a bonding member on the wire and the first contact configured to secure the wire to the first contact; and a second semiconductor die having a third contact bonded to the second contact on the wire.
- Claim: 19. The semiconductor component of claim 18 wherein the second contact comprises a ball on an end of the wire and the third contact comprises a metal bump bonded to the ball.
- Claim: 20. The semiconductor component of claim 18 further comprising a fourth contact on the first side in electrical communication with a DQ circuit on the first semiconductor die.
- Current U.S. Class: 257/784
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- Primary Examiner: Parekh, Nitin
- Attorney, Agent or Firm: Gratton, Stephen A.
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