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A method for treating a substrate is disclosed. The method includes forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer. In the method, portions of the patterning layer are removed to form sidewalls of the patterning layer and expose portions of the coating layer, a carbon-containing layer is deposited on the exposed portions of the coating layer and non-sidewall portions of the patterning layer, and the carbon-containing layer and a portion of the coating layer are removed to expose other portions of the coating layer and the patterning layer. The method further includes repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.

Titel:	Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
Autor/in / Beteiligte Person:	Tokyo Electron Limited
Link:	View record in USPTO Patent Grants (Volltext)
Veröffentlichung:	2017
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Grants Sprachen: English Patent Number: 9,818,610 Publication Date: November 14, 2017 Appl. No: 15/458476 Application Filed: March 14, 2017 Assignees: Tokyo Electron Limited (Tokyo, JP) Claim: 1. A method for treating a substrate, comprising: forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer; removing portions of the patterning layer to form sidewalls of the patterning layer and expose portions of the coating layer; depositing a carbon-containing layer on the exposed portions of the coating layer and non-sidewall portions of the patterning layer; removing the carbon-containing layer and a portion of the coating layer to expose other portions of the coating layer and the patterning layer; repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed. Claim: 2. The method of claim 1 , wherein the deposition of the carbon-containing layer comprises: exposing the substrate to a plurality of carbon-containing gas; and applying deposition power to the plurality carbon-containing gases. Claim: 3. The method of claim 2 , wherein the removing of the carbon-containing layer comprises: exposing the substrate to the nitrogen-containing gas and hydrogen-containing gas; and applying etching power to the nitrogen-containing gas and hydrogen-containing gas. Claim: 4. The method of claim 3 , wherein deposition power and the etching power comprise a similar magnitude. Claim: 5. The method of claim 1 , wherein d the carbon-containing gases comprise CH 3 F and CF 4 . Claim: 6. The method of claim 4 , wherein the deposition power and the etching power comprises about 1500V. Claim: 7. The method of claim 4 , wherein the deposition power and the etching power comprise between 800V and 2000V. Patent References Cited: 2005/0153538 July 2005 Tsai et al. ; 2007/0077516 April 2007 Chang ; 2011/0049649 March 2011 Anderson et al. ; 200524124 July 2005 ; 200712779 April 2007 ; 201121876 July 2011 Other References: Feurprier Yannick et al.; “Trench and Hole patterning with Resists using Dual Frequency Capacitvely Coupled Plasma (CCP)”; Proc. of SPIE vol. 9428, pp. F1-F10, 2015. cited by applicant ; Chu Changwoong et al.; “Effects of Fluorocarbon Polymer Deposition on the Selective Etching of SiO2/Photoresist in High Density Plasma”; J. Vac. Sci. Technol. B; vol. 18, No. 6, pp. 2763-2768 Nov./Dec. 2000. cited by applicant ; Kazuki Narishige et al.; “EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement”; Proc. of SPIE vol. 8328, pp. N1-N6, 2012. cited by applicant ; Hiroki Nakagawa et al.; “Ultra-thin Film EUV Resists beyond 20nm Lithography”; Proc. of SPIE vol. 7972, pp. I1-I7, 2011. cited by applicant ; International Appl. No. PCT/US2016/025555, International Search Report and Written Opinion, dated Jun. 14, 2016. cited by applicant ; Taiwan Intellectual Property Office, Office Action issued in corresponding TW Application No. 105110468 dated May 12, 2017, 17 pp, including English translation. cited by applicant Primary Examiner: Culbert, Roberts Attorney, Agent or Firm: Wood Herron & Evans LLP

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Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)