Einzeltreffer — DigiBib

The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.

Titel:	Strained diamond growing and doping method based on chemical vapor deposition (CVD) method
Autor/in / Beteiligte Person:	WUHAN, UNIVERSITY
Link:	View record in USPTO Patent Grants (Volltext)
Veröffentlichung:	2022
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Grants Sprachen: English Patent Number: 11519,097 Publication Date: December 06, 2022 Appl. No: 17/849761 Application Filed: June 27, 2022 Assignees: WUHAN UNIVERSITY (Hubei, CN) Claim: 1. A method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method, comprising the following steps: Step 1: performing preparatory work of a substrate layer: placing the substrate layer on a sample stage of a CVD device; Step 2: growing an X a C 1-a gradient buffer layer by CVD: introducing a mixed gas of a gas containing an element X, a methane gas and hydrogen to prepare the X a C 1-a gradient buffer layer, wherein a is a proportion of the element X in X a C 1-a ; Step 3: growing an X b C 1-b relaxation layer by CVD: introducing a mixed gas of a gas containing an element X, a methane gas and hydrogen, and fixing a flow of the gas containing the element X to make a component X of the X b C 1-b relaxation layer be kept constant in a perpendicular direction so as to prepare the X b C 1-b relaxation layer, wherein b is a proportion of the element X in X b C 1-b , X is a lattice constant adjusting element, and C is an element carbon; Step 4: growing and doping a CVD strained diamond layer by CVD: introducing a mixed gas containing a doping gas, a methane gas and hydrogen to make the diamond be doped while growing so as to grow the CVD strained diamond layer on the X b C 1-b relaxation layer, wherein a lattice constant of the X b C 1-b relaxation layer is greater than a diamond lattice constant of the CVD strained diamond layer, so that the CVD strained diamond layer is in a stretching strain state; and Step 5: stripping the substrate layer to obtain a diamond-doped epitaxial structure. Claim: 2. The method for growing and doping a strained diamond based on a CVD method according to claim 1 , wherein the element X is an element germanium or silicon. Claim: 3. The method for growing and doping a strained diamond based on a CVD method according to claim 1 , wherein in Step 2, when the substrate layer is made from a silicon single crystal material, a value of a is decreased gradually with passage of a deposition time, namely, it is to set that the flow of the gas containing the element X is decreased gradually over time; and when the substrate layer is made from a diamond single crystal material, the value of a is increased gradually with passage of the deposition time, namely, it is to set that the flow of the gas containing the element X is increased gradually over time. Claim: 4. The method for growing and doping a strained diamond based on a CVD method according to claim 3 , wherein the components of the introduced mixed gas in Step 3 are constant in proportion, and a flow ratio of the gas containing the element X to the introduced methane gas is substantially equal to a flow ratio of the gas containing the element X to the introduced methane gas at the end in Step 2. Claim: 5. The method for growing and doping a strained diamond based on a CVD method according to claim 3 , wherein in each of Step 2 and Step 3, the flow ratio of the introduced methane gases to hydrogen in the introduced mixed gas ranges from 0.1% to 20%. Claim: 6. The method for growing and doping a strained diamond based on a CVD method according to claim 3 , wherein in each of Step 1, Step 2, Step 3 and the Step 4, the flow of the introduced hydrogen is 1-2000 sccm. Claim: 7. The method for growing and doping a strained diamond based on a CVD method according to claim 3 , wherein in Step 4, the flow ratio of the introduced doping gas to the introduced methane gas in the introduced mixed gas ranges from 0.1% to 50%. Claim: 8. The method for growing and doping a strained diamond based on a CVD method according to claim 1 , wherein the doping gas is any one of phosphine, hydrogen arsenide, oxygen and hydrogen sulfide. Claim: 9. The method for growing and doping a strained diamond based on a CVD method according to claim 1 , wherein a magnitude relationship between a lattice constant A1 of the single crystal material of the X b C 1-b relaxation layer and a diamond lattice constant A2 of the CVD strained diamond layer is: A1>A2 and A1<(1+9%)×A2. Claim: 10. The method for growing and doping a strained diamond based on a CVD method according to claim 1 , further comprising the following step: Step 6: removing the substrate layer, the X a C 1-a gradient buffer layer and the X b C 1-b relaxation layer by an etching process to obtain a strainless doped diamond. Patent References Cited: 6893936 May 2005 Chen ; 20020160584 October 2002 Kanzawa et al. ; 20020182423 December 2002 Chu ; 20170213820 July 2017 Balakrishnan et al. ; 1364309 August 2002 ; 1723545 January 2006 ; 1954421 April 2007 ; 102162137 August 2011 ; 108545738 September 2018 ; 111051257 April 2020 ; 112142464 December 2020 ; 113096749 July 2021 ; 2004064130 July 2004 ; 2006011912 February 2006 ; 2019051299 March 2019 Primary Examiner: Bratland, Jr., Kenneth A Attorney, Agent or Firm: JCIP Global Inc.

Klicken Sie ein Format an und speichern Sie dann die Daten oder geben Sie eine Empfänger-Adresse ein und lassen Sie sich per Email zusenden.

BibTeX Citavi, JabRef, u.a.
(Literaturverwaltung)

PDF kein Volltext!
(Merkzettel, Notizen)

RIS Endnote, Citavi u.a.
(Literaturverwaltung)

MODS
(XML zur Weiterverarbeitung)

oder

Wählen Sie das für Sie passende Zitationsformat und kopieren Sie es dann in die Zwischenablage, lassen es sich per Mail zusenden oder speichern es als PDF-Datei.

Gewünschter Zitations-Stil:

oder

Bitte prüfen Sie, ob die Zitation formal korrekt ist, bevor Sie sie in einer Arbeit verwenden. Benutzen Sie gegebenenfalls den "Exportieren"-Dialog, wenn Sie ein Literaturverwaltungsprogramm verwenden und die Zitat-Angaben selbst formatieren wollen.

Strained diamond growing and doping method based on chemical vapor deposition (CVD) method