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Superconducting bilayers of two-dimensional materials with integrated Josephson junctions

Wisconsin Alumni Research Foundation ; University of Hamburg
2023
Online Patent

Titel:
Superconducting bilayers of two-dimensional materials with integrated Josephson junctions
Autor/in / Beteiligte Person: Wisconsin Alumni Research Foundation ; University of Hamburg
Link:
Veröffentlichung: 2023
Medientyp: Patent
Sonstiges:
  • Nachgewiesen in: USPTO Patent Grants
  • Sprachen: English
  • Patent Number: 11711,984
  • Publication Date: July 25, 2023
  • Appl. No: 17/366195
  • Application Filed: July 02, 2021
  • Assignees: Wisconsin Alumni Research Foundation (Madison, WI, US)
  • Claim: 1. A Josephson junction comprising: a superconducting bilayer comprising two azimuthally misaligned layers of a two-dimensional material, wherein the superconducting bilayer comprises a first segment and a second segment; and a weak-link region separating the first segment from the second segment, wherein the weak-link region has an enhanced concentration of lattice defects relative to the first segment and second segment and is an integral part of the superconducting bilayer.
  • Claim: 2. The Josephson junction of claim 1 , wherein the weak-link region has a length in the range from 50 μm to 500 μm.
  • Claim: 3. The Josephson junction of claim 1 , wherein the superconducting bilayer is twisted-bilayer graphene.
  • Claim: 4. The Josephson junction of claim 1 , wherein the superconducting bilayer is a twisted-bilayer transition metal dichalcogenide.
  • Claim: 5. A Josephson junction comprising: a superconducting bilayer comprising two azimuthally misaligned layers of a two-dimensional material, wherein the superconducting bilayer comprises a first segment and a second segment; and a weak-link region separating the first segment from the second segment, wherein the weak-link region comprises an out-of-plane bend and is an integral part of the superconducting bilayer.
  • Claim: 6. The Josephson junction of claim 5 , wherein the weak-link region has a length in the range from 50 μm to 500 μm.
  • Claim: 7. The Josephson junction of claim 5 , wherein the superconducting bilayer is twisted-bilayer graphene.
  • Claim: 8. The Josephson junction of claim 5 , wherein the superconducting bilayer is a twisted-bilayer transition metal dichalcogenide.
  • Claim: 9. A Josephson junction device comprising: a Josephson junction comprising a superconducting bilayer comprising two azimuthally misaligned layers of a two-dimensional material, wherein the superconducting bilayer comprises a first segment and a second segment; and a weak-link region separating the first segment from the second segment, wherein the weak-link region has an enhanced concentration of lattice defects relative to the first segment and second segment and is an integral part of the superconducting bilayer; a first electrode in electrical communication with the first segment; a second electrode in electrical communication with the second segment; a gate dielectric underlying the Josephson junction; and a back-gate electrode underlying the gate dielectric.
  • Claim: 10. The device of claim 9 , wherein the gate dielectric comprises a charge carrier enhancing substrate.
  • Claim: 11. The device of claim 10 , wherein the charge carrier enhancing substrate comprises hexagonal boron nitride.
  • Claim: 12. The device of claim 10 , wherein the charge carrier enhancing substrate comprises Ge(001).
  • Claim: 13. A Josephson junction device comprising: a Josephson junction comprising a superconducting bilayer comprising two azimuthally misaligned layers of a two-dimensional material, wherein the superconducting bilayer comprises a first segment and a second segment; and a weak-link region separating the first segment from the second segment, wherein the weak-link region comprises an out-of-plane bend and is an integral part of the superconducting bilayer; a first electrode in electrical communication with the first segment; a second electrode in electrical communication with the second segment; a gate dielectric underlying the Josephson junction; and a back-gate electrode underlying the gate dielectric.
  • Claim: 14. The device of claim 13 , wherein the gate dielectric comprises a charge carrier enhancing substrate.
  • Claim: 15. The device of claim 14 , wherein the charge carrier enhancing substrate comprises hexagonal boron nitride.
  • Claim: 16. The device of claim 14 , wherein the charge carrier enhancing substrate comprises Ge(001).
  • Claim: 17. A microwave detector comprising: a Josephson junction device comprising: a Josephson junction comprising a superconducting bilayer comprising two azimuthally misaligned layers of a two-dimensional material, wherein the superconducting bilayer comprises a first segment and a second segment; and a weak-link region separating the first segment from the second segment, wherein the weak-link region has an enhanced concentration of lattice defects relative to the first segment and second segment and is an integral part of the superconducting bilayer; a first electrode in electrical communication with the first segment; a second electrode in electrical communication with the second segment; a gate dielectric underlying the Josephson junction; and a back-gate electrode underlying the gate dielectric; a microwave source configured to direct one or more microwave photons onto the weak-link region; and a voltage detector configured to measure the voltage across the weak-link region of the Josephson junction.
  • Claim: 18. A microwave detector comprising: a Josephson junction device comprising: a Josephson junction comprising a superconducting bilayer comprising two azimuthally misaligned layers of a two-dimensional material, wherein the superconducting bilayer comprises a first segment and a second segment; and a weak-link region separating the first segment from the second segment, wherein the weak-link region comprises an out-of-plane bend and is an integral part of the superconducting bilayer; a first electrode in electrical communication with the first segment; a second electrode in electrical communication with the second segment; a gate dielectric underlying the Josephson junction; and a back-gate electrode underlying the gate dielectric; a microwave source configured to direct one or more microwave photons onto the weak-link region; and a voltage detector configured to measure the voltage across the weak-link region of the Josephson junction.
  • Patent References Cited: 5582877 December 1996 Nagamachi et al. ; 6207067 March 2001 Yutani et al. ; 9383208 July 2016 Mohanty ; 9799817 October 2017 Fong et al. ; 20190024554 August 2019 Herr ; 20200052183 February 2020 Shainline et al. ; 20210217946 July 2021 Lee ; 10-0365984 July 2003 ; WO2019/183105 September 2019
  • Other References: International Search Report and Written Opinion for PCT/US2021/040224, dated Apr. 14, 2022. cited by applicant ; Luong et al., “Gram-scale bottom-up flash graphene synthesis,” Nature, vol. 577, Jan. 30, 2020, pp. 647-653. cited by applicant ; Prof. Dr. Christian Schonenberger, Swiss Nanoscience Institute, PhD fellowship “Superconductivity in Twisted Bilayer of Graphene” Universitat Basel, Sep. 2019. cited by applicant ; Alex I. Braginski, “Superconductor Electronics: Status and Outlook,” Journal of Superconductivity and Novel Magnetism, (2019) 32:23-44. cited by applicant ; Kraft et al., “Tailoring supercurrent confinement in graphene bilayer weak links,” Nature Communications, (2018)9:1722. cited by applicant ; Lee, GH., Efetov, D.K., Jung, W. et al. Graphene-based Josephson junction microwave bolometer. Nature 586, 42-46 (2020). https://doi.org/10.1038/s41586-020-2752-4. cited by applicant ; Chao-Xing Liu “Unconventional superconductivity in bilayer transition metal dichalcogenides,” Phys. Rev. Lett. 118, 087001—Published Feb. 21, 2017. cited by applicant ; Rodan-Legrain et al., “Fully Tunable Magic Angle Twisted Bilayer Graphene Josephson Junction,” Bulletin of the American Physical Society, APS March Meeting 2020, vol. 65, No. 1. cited by applicant ; Walsh et al., “Graphene-based Josephson junction single photon detector,” Phys. Rev. Applied 8, 024022—Published Aug. 24, 2017. cited by applicant ; Wollman et al., “Experimental Determinatino of the Superconducting Pairing State in YBCO from the Phase Coherence of YBCO—Pb dcSQUIDs,” Physical Review Letters, vol. 71, No. 13, Sep. 27, 1993, 4 pages. cited by applicant ; Zhang et al., “Resistively detected microwave absorption in highly twisted bilayer graphene,” APS March Meeting 2019, 2 pages. cited by applicant
  • Primary Examiner: Reames, Matthew L
  • Attorney, Agent or Firm: Bell & Manning, LLC

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