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Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

Titel:	CVD based oxide-metal multi structure for 3D NAND memory devices
Autor/in / Beteiligte Person:	Applied Materials, Inc.
Link:	View record in USPTO Patent Grants (Volltext)
Veröffentlichung:	2023
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Grants Sprachen: English Patent Number: 11817,320 Publication Date: November 14, 2023 Appl. No: 16/554834 Application Filed: August 29, 2019 Assignees: Applied Materials, Inc. (Santa Clara, CA, US) Claim: 1. A method, comprising: placing a substrate into a processing chamber; forming a metal layer on a seed layer formed on the substrate, comprising: increasing a temperature of the substrate to a processing temperature; flowing a metal-containing precursor and nitrogen gas into the processing chamber, wherein a ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 10:1 to 1:2; and forming a plasma inside of the processing chamber by igniting the metal-containing precursor and the nitrogen gas with a high frequency radio frequency power and a low frequency radio frequency power; and forming an oxide layer on a surface of the metal layer disposed on the substrate, forming the oxide layer comprising: flowing an oxygen-free precursor into the processing chamber, the oxygen-free precursor being excited by a plasma to form an oxygen-free species; flowing an oxygen-containing gas into the processing chamber subsequent to forming the oxygen-free species while continuing to flow the oxygen-free precursor into the processing chamber, the oxygen-containing gas being excited by the plasma to form an oxygen species; and bonding the oxygen-free species to the oxygen species during forming of the oxygen species. Claim: 2. The method of claim 1 , further comprising flowing one or more non-reactive gases into the processing chamber prior to flowing the oxygen-free precursor into the processing chamber. Claim: 3. The method of claim 2 , wherein the one or more non-reactive gases comprises argon or hydrogen gas. Claim: 4. The method of claim 1 , wherein the oxygen-free precursor is a silicon-containing precursor. Claim: 5. The method of claim 4 , wherein the oxygen-free precursor is silane. Claim: 6. The method of claim 1 , wherein the oxygen-containing gas is oxygen gas. Claim: 7. The method of claim 1 , wherein the metal layer is tungsten. Claim: 8. The method of claim 1 , wherein the oxide layer is silicon oxide. Claim: 9. A method, comprising: placing a substrate into a first processing chamber; forming a metal layer on a seed layer formed on the substrate, comprising: increasing a temperature of the substrate to a processing temperature; flowing a metal-containing precursor and nitrogen gas into the first processing chamber, wherein a ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 10:1 to 1:2; and forming a plasma inside of the first processing chamber by igniting the metal-containing precursor and the nitrogen gas with a high frequency radio frequency power and a low frequency radio frequency power; and placing the substrate into a second processing chamber; igniting non-reactive gases to form a plasma in the second processing chamber; and forming an oxide layer on a surface of the metal layer disposed on the substrate, forming the oxide layer comprising: flowing an oxygen-free precursor into the second processing chamber, the oxygen-free precursor being excited by the plasma to form an oxygen-free species; forming a monolayer of the oxygen-free species on the metal layer; then flowing an oxygen-containing gas into the second processing chamber while continuing to flow the oxygen-free precursor into the second processing chamber, the oxygen-containing gas being excited by the plasma to form an oxygen species in the second processing chamber; and then bonding the oxygen-free species to the oxygen species. Claim: 10. The method of claim 9 , wherein the oxide layer comprises silicon oxide. Claim: 11. The method of claim 10 , wherein the metal layer comprises tungsten. Claim: 12. The method of claim 11 , wherein the monolayer of the oxygen-free species comprises a monolayer of amorphous silicon. Claim: 13. The method of claim 12 , wherein the oxygen species comprise oxygen radicals or ions. Claim: 14. A method, comprising: placing a substrate into a first processing chamber; forming a metal layer on a seed layer formed on the substrate, wherein forming the metal layer on the seed layer, comprises: increasing a temperature of the substrate to a processing temperature; flowing a metal-containing precursor and nitrogen gas into the first processing chamber, wherein a ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 10:1 to 1:2; and forming a plasma inside of the first processing chamber by igniting the metal-containing precursor and the nitrogen gas with a high frequency radio frequency power and a low frequency radio frequency power; placing the substrate into a second processing chamber; removing a native oxide from the metal layer; and forming an oxide layer on the metal layer, wherein forming the oxide layer comprises: flowing an oxygen-free precursor into the second processing chamber, wherein the oxygen-free precursor is excited by a plasma to form an oxygen-free species; flowing an oxygen-containing gas into the second processing chamber subsequent to forming the oxygen-free species while continuing to flow the oxygen-free precursor into the second processing chamber, wherein the oxygen-containing gas is excited by the plasma to form an oxygen species; and bonding the oxygen-free species to the oxygen species during forming of the oxygen species. Claim: 15. The method of claim 14 , wherein removing the native oxide from the metal layer comprises flowing one or more non-reactive gases into the second processing chamber. Claim: 16. The method of claim 15 , wherein the one or more non-reactive gases comprises argon or hydrogen gas. Claim: 17. The method of claim 14 , wherein the oxygen-free precursor is a silicon-containing precursor. Claim: 18. The method of claim 17 , wherein the oxygen-free precursor is silane. Claim: 19. The method of claim 17 , wherein the oxygen-containing gas is oxygen gas. Claim: 20. The method of claim 19 , wherein the metal layer is tungsten. 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CVD based oxide-metal multi structure for 3D NAND memory devices