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- Nachgewiesen in: USPTO Patent Grants
- Sprachen: English
- Patent Number: 11917,315
- Publication Date: February 27, 2024
- Appl. No: 18/100392
- Application Filed: January 23, 2023
- Assignees: SAMSUNG ELECTRONICS CO., LTD. (Suwon-si, KR)
- Claim: 1. An image sensor comprising: a photoelectric conversion device being responsive to an incident light; a transfer transistor disposed between the photoelectric conversion device and a floating diffusion node and being responsive to a transfer control signal; a reset transistor including a first electrode connected to the floating diffusion node and a gate electrode to receive a reset control signal; and a switch circuitry configured to electrically connect a second electrode of the reset transistor either a power supply voltage or an event detect circuitry in response to a mode control signal.
- Claim: 2. The image sensor of claim 1 , wherein the mode control signal indicates that the image sensor operates in an image sensing mode or an event detection mode, and wherein when the image sensor operates in the image sensing mode, the second electrode of the reset transistor is connected to the power supply voltage via the switch circuitry.
- Claim: 3. The image sensor of claim 2 , wherein when the image sensor operates in the event detection mode, the second electrode of the reset transistor is connected to the event detect circuitry via the switch circuitry.
- Claim: 4. The image sensor of claim 2 , wherein when the image sensor operates in the event detection mode, a photocurrent being responsive to the incident light flows through the reset transistor, the transfer transistor and the photoelectric conversion device.
- Claim: 5. The image sensor of claim 2 , wherein when the image sensor operates in the event detection mode, the transfer control signal turns on the transfer transistor and the reset control signal turns on the reset transistor during the event detection mode.
- Claim: 6. The image sensor of claim 2 , further comprising a source follower configured to sense the floating diffusion node and a selection transistor connected to a column line, wherein when the image sensor operates in the event detection mode, the selection transistor is turned off.
- Claim: 7. The image sensor of claim 2 , wherein the image sensing mode and the event detection mode using the photoelectric conversion device do not occur at the same time.
- Claim: 8. An image sensor comprising: a first image pixel unit including two or more pairs of pixels, each including a photoelectric conversion device and a transfer transistor, the photoelectric conversion device being responsive to an incident light, and the transfer transistor being disposed between the corresponding photoelectric conversion device and a first shared floating diffusion node and being responsive to a transfer control signal; a first reset transistor including a first electrode connected to the first shared floating diffusion node and a gate electrode to receive a first reset control signal; and a switch circuitry configured to connect a second electrode of the first reset transistor either a power supply voltage or an event detect circuitry in response to a mode control signal.
- Claim: 9. The image sensor of claim 8 , wherein the mode control signal indicates that the image sensor operates in an image sensing mode or an event detection mode, and wherein when the image sensor operates in the image sensing mode, the first shared floating diffusion node of the first reset transistor is connected to the power supply voltage via the switch circuitry.
- Claim: 10. The image sensor of claim 9 , wherein when the image sensor operates in the event detection mode, the second electrode of the first reset transistor is connected to the event detect circuitry via the switch circuitry.
- Claim: 11. The image sensor of claim 9 , wherein when the image sensor operates in the event detection mode, the transfer control signals turn on the transfer transistors, respectively, and the first reset control signal turns on the first reset transistor, respectively, during the event detection mode.
- Claim: 12. The image sensor of claim 9 , wherein when the image sensor operates in the event detection mode, a photocurrent being responsive to the incident light flows through the first reset transistor, the transfer transistors and the photoelectric conversion device.
- Claim: 13. The image sensor of claim 8 , further comprising: a second image pixel unit including two or more pairs of pixels, each including a photoelectric conversion device and a transfer transistor, the photoelectric conversion device being responsive to an incident light, and the transfer transistor being disposed between the corresponding photoelectric conversion device and a second shared floating diffusion node and being responsive to a transfer control signal; and a second reset transistor including a first electrode connected to the second shared floating diffusion node and a gate electrode to receive a second reset control signal, wherein the second electrode of the second reset transistor is connected to the second electrode of the first reset transistor.
- Claim: 14. The image sensor of claim 13 , wherein the mode control signal indicates that the image sensor operates in an image sensing mode or an event detection mode, wherein when the image sensor operates in the image sensing mode, the first shared floating diffusion node of the first reset transistor is connected to the power supply voltage via the switch circuitry, and wherein during the event detection mode, the switch circuitry configured to connect the second electrode of the first reset transistor and the second electrode of the second reset transistor to either the power supply voltage or the event detect circuitry in response to the mode control signal.
- Claim: 15. The image sensor of claim 8 , wherein the mode control signal indicates that the image sensor operates in an image sensing mode or an event detection mode, wherein when the image sensor operates in the image sensing mode, the first shared floating diffusion node of the first reset transistor is connected to the power supply voltage via the switch circuitry, and wherein a resolution of the image sensor for the event detection mode is smaller than a resolution of the image sensor for the image sensing mode.
- Claim: 16. The image sensor of claim 13 , wherein the first image pixel unit further comprises a first source follower configured to sense the first shared floating diffusion node and a first selection transistor connected to a first column line, and the second image pixel unit further comprises a second source follower configured to sense the second shared floating diffusion node and a second selection transistor connected to a second column line.
- Claim: 17. The image sensor of claim 16 , wherein the mode control signal indicates that the image sensor operates in an image sensing mode or an event detection mode, wherein when the image sensor operates in the image sensing mode, the first shared floating diffusion node of the first reset transistor is connected to the power supply voltage via the switch circuitry, and wherein when the image sensor operates in the event detection mode, the first and second selection transistor is turned off.
- Claim: 18. An image sensor comprising: a photoelectric conversion device being responsive to an incident light; a first transistor disposed between the photoelectric conversion device and a floating diffusion node and being responsive to a transfer control signal; a second transistor including a first electrode connected to the floating diffusion node and a gate electrode to receive a reset control signal; and an event detect circuitry, wherein the second transistor is configured to reset the floating diffusion node for a first operating mode and to enable a photocurrent to flow from the event detect circuitry to the photoelectric conversion device for a second operating mode.
- Claim: 19. The image sensor of claim 18 , wherein the first operating mode is an image sensing mode and the second operating mode is an event detection mode, and wherein when the image sensor operates in the image sensing mode, the second transistor is connected to a power supply voltage for resetting floating diffusion node to the power supply voltage in response to the reset control signal.
- Claim: 20. The image sensor of claim 19 , wherein when the image sensor operates in the event detection mode, the photocurrent flows from the event detect circuitry to the photoelectric conversion device through the second transistor and the first transistor.
- Claim: 21. The image sensor of claim 20 , wherein the photoelectric conversion device, the first transistor and the second transistor are disposed in a first semiconductor substrate and the event detect circuitry is disposed in a second semiconductor substrate stacked on the first semiconductor substrate.
- Claim: 22. The image sensor of claim 21 , wherein the second semiconductor substrate does not have any photoelectric conversion device.
- Claim: 23. A stacked image sensor comprising: a first semiconductor substrate including a first image pixel unit including at least two or more pairs of pixels, each including a photoelectric conversion device and a transfer transistor, the photoelectric conversion device being responsive to an incident light and the transfer transistor being disposed between the corresponding photoelectric conversion device and a first shared floating diffusion node and being responsive to a transfer control signal, and a first reset transistor including a first electrode connected to the first shared floating diffusion node and a gate electrode to receive a first reset control signal; and a second semiconductor substrate stacked on the first semiconductor substrate and including a switch circuitry configured to connect a second electrode of the first reset transistor either a power supply voltage or an event detect circuitry in response to a mode control signal.
- Claim: 24. The stacked image sensor of claim 23 , the first semiconductor substrate further including: a second image pixel unit including at least two or more pairs of pixels, each including a photoelectric conversion device and a transfer transistor, the photoelectric conversion device being responsive to an incident light, the transfer transistor being disposed between the corresponding photoelectric conversion device and a second shared floating diffusion node and being responsive to a transfer control signal, and a second reset transistor including a first electrode connected to the second shared floating diffusion node and a gate electrode to receive a second reset control signal, and wherein a second electrode of the first reset transistor and a second electrode of the second reset transistor are connected to each other.
- Claim: 25. The stacked image sensor of claim 24 , wherein the mode control signal indicates that the stacked image sensor operates in an image sensing mode or an event detection mode, wherein when the stacked image sensor operates in the image sensing mode, the first shared floating diffusion node of the first reset transistor and the second shared floating diffusion node of the second reset transistor is connected to the power supply voltage via the switch circuitry.
- Claim: 26. The stacked image sensor of claim 25 , wherein when the stacked image sensor operates in the event detection mode, the second electrode of the first reset transistor and the second shared floating diffusion node of the second reset transistor is connected to the event detect circuitry via the switch circuitry.
- Claim: 27. The stacked image sensor of claim 25 , wherein when the stacked image sensor operates in the event detection mode, a first photocurrent being responsive to the incident light flows through the first reset transistor, the transfer transistors and the photoelectric conversion device included in the first pixel unit, and a second photocurrent being responsive to the incident light flows through the second reset transistor, the transfer transistors and the photoelectric conversion devices included in the second pixel unit.
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- Primary Examiner: Selby, Gevell V
- Attorney, Agent or Firm: Sughrue Mion, PLLC
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