High voltage device with boosted breakdown voltage
2024
Online
Patent
An integrated circuit (IC) device comprises a high voltage semiconductor device (HVSD) on a frontside of a semiconductor body and further comprises an electrode on a backside of the semiconductor body opposite the frontside. The HVSD may, for example, be a transistor or some other suitable type of semiconductor device. The electrode has one or more gaps directly beneath the HVSD. The one or more gaps enhance the effectiveness of the electrode for improving the breakdown voltage of the HVSD.
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High voltage device with boosted breakdown voltage
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Autor/in / Beteiligte Person: | Taiwan Semiconductor Manufacturing Company, Ltd. |
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Veröffentlichung: | 2024 |
Medientyp: | Patent |
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