Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC
Elsevier, 2009
Online
academicJournal
Zugriff:
Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56 - 2.74 g/cm3) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 Ǻ/s and <0.5 Ǻ/s were obtained for films deposited at 100ºC and 250ºC, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10-14 Ω-1cm-1 and breakdown fields >10 MV cm−1.
Fundação para a Ciência e Tecnologia (FCT) - FCT/CNRS programa com o contracto no. 20798, bolsa de investigaçao e projecto PTDC-CTM-66558-2006
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Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC
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Autor/in / Beteiligte Person: | Alpuim, P. ; Gonçalves, L. M. ; Marins, Emílio Sérgio ; Viseu, T. M. R. ; Ferdov, S. ; Bourée, J. E. ; Universidade do Minho |
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Veröffentlichung: | Elsevier, 2009 |
Medientyp: | academicJournal |
DOI: | 10.1016/j.tsf.2009.01.077 |
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