A silicon-based 0.3 THz frequency synthesizer with wide locking range
In: IEEE Journal of Solid-State Circuits, Jg. 49 (2014-12-01), Heft 12
Online
academicJournal
- 2951 - 2963
A 300 GHz frequency synthesizer incorporating a triple-push VCO with Colpitts-based active varactor (CAV) and a divider with three-phase injection is introduced. The CAV provides frequency tunability, enhances harmonic power, and buffers/injects the VCO fundamental signal from/to the divider. The locking range of the divider is vastly improved due to the fact that the three-phase injection introduces larger allowable phase change and injection power into the divider loop. Implemented in 90 nm SiGe BiCMOS, the synthesizer achieves a phase-noise of -77.8 dBc/Hz (-82.5 dBc/Hz) at 100 kHz (1 MHz) offset with a crystal reference, and an overall locking range of 280.32-303.36 GHz (7.9%).
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A silicon-based 0.3 THz frequency synthesizer with wide locking range
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Autor/in / Beteiligte Person: | Chiang, PY ; Wang, Z ; Momeni, O ; Heydari, P |
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Zeitschrift: | IEEE Journal of Solid-State Circuits, Jg. 49 (2014-12-01), Heft 12 |
Veröffentlichung: | eScholarship, University of California, 2014 |
Medientyp: | academicJournal |
Umfang: | 2951 - 2963 |
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