A highly CMOS compatible hafnia-based ferroelectric diode
In: Nature Communications, Jg. 11 (2020-03-01), Heft 1
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academicJournal
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Memory devices with high speed and high density are highly desired to address the 'memory wall' issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifying polarity modulated by the polarization reversal of Hf0.5Zr0.5O2 films. By visualizing the hafnium/zirconium lattice order and oxygen lattice order with atomic-resolution spherical aberration-corrected STEM, we revealed the correlation between the spontaneous polarization of Hf0.5Zr0.5O2 film and the displacement of oxygen atom, thus unambiguously identified the non-centrosymmetric Pca21 orthorhombic phase in Hf0.5Zr0.5O2 film. We further implemented this ferroelectric diode in an 8 layers 3D array. Operation speed as high as 20 ns and robust endurance of more than 109 were demonstrated. The built-in nonlinearity of more than 100 guarantees its self-selective property that eliminates the need for external selectors to suppress the leakage current in large array. This work opens up new opportunities for future memory hierarchy evolution.
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A highly CMOS compatible hafnia-based ferroelectric diode
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Autor/in / Beteiligte Person: | Luo, Qing ; Cheng, Yan ; Yang, Jianguo ; Cao, Rongrong ; Ma, Haili ; Yang, Yang ; Huang, Rong ; Wei, Wei ; Zheng, Yonghui ; Gong, Tiancheng ; Yu, Jie ; Xu, Xiaoxin ; Yuan, Peng ; Li, Xiaoyan ; Tai, Lu ; Yu, Haoran ; Shang, Dashan ; Liu, Qi ; Yu, Bing ; Ren, Qiwei ; Lv, Hangbing ; Liu, Ming |
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Zeitschrift: | Nature Communications, Jg. 11 (2020-03-01), Heft 1 |
Veröffentlichung: | eScholarship, University of California, 2020 |
Medientyp: | academicJournal |
Umfang: | 1391 |
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