Broadband Sub-THz Low Noise Amplifier Design in Silicon
eScholarship, University of California, 2022
Online
unknown
The THz band (0.1 - 10 THz) holds several applications such as high-speed communication,3D imaging radars, and spectroscopy. A high-sensitivity receiver is crucial for fully utilizingthis broad untapped spectrum. Advancements in silicon technologies now enable transistorswith maximum oscillation frequency (fmax) beyond 400 GHz, enabling silicon THz ICs.This thesis presents two ultra-wideband low noise amplifiers in the THz band, designedusing silicon technologies. Several key concepts are discussed, such as optimal bias selection,passive circuit modeling, bandwidth enhancement, circuit-EM co-simulation approaches, andTHz probe-based testing. The first design is a 7-stage cascaded common-emitter LNA withmore than 80 GHz of 3-dB bandwidth, covering the entire WR5 frequency band (140-220GHz). It has a measured peak gain of 15.5 dB and a simulated NF of 6.8 dB at 180 GHz,with 46 mW DC power consumption, and is implemented in the IHP 130 nm SiGe BiCMOSprocess. The second design is a cascaded 12-stage common-emitter LNA with 45 GHz of 3-dBbandwidth, from 190 GHz to 235 GHz. This design achieves a peak gain of 216 GHz, a sub 10dB noise figure, DC power consumption of 19.9 mW, and is implemented in GlobalFoundries22nm FDSOI process.
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Broadband Sub-THz Low Noise Amplifier Design in Silicon
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Autor/in / Beteiligte Person: | Thomas, Sidharth |
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Veröffentlichung: | eScholarship, University of California, 2022 |
Medientyp: | unknown |
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