Electrochemical capacitance-voltage characterization of plasma-doped ultra-shallow junctions
In: Frontiers of Electrical and Electronic Engineering in China: Selected Publications from Chinese Universities, Jg. 3 (2008), Heft 1, S. 116-119
Online
academicJournal
Zugriff:
Titel: |
Electrochemical capacitance-voltage characterization of plasma-doped ultra-shallow junctions
|
---|---|
Autor/in / Beteiligte Person: | Wu, Huizhen ; Ru, Guoping ; Zhang, Yonggang ; Jin, Chengguo ; Mizuno, Bunji ; Jiang, Yulong ; Qu, Xinping ; Li, Bingzong |
Link: | |
Zeitschrift: | Frontiers of Electrical and Electronic Engineering in China: Selected Publications from Chinese Universities, Jg. 3 (2008), Heft 1, S. 116-119 |
Veröffentlichung: | 2008 |
Medientyp: | academicJournal |
ISSN: | 1673-3460 (print) ; 1673-3584 (print) |
DOI: | 10.1007/s11460-008-0016-4 |
Sonstiges: |
|