A Two-Dimensional MoS<subscript>2</subscript> Device and CMOS Inverter Based on the Plasma Immersion Doping Technique
In: Journal of Electronic Materials, Jg. 52 (2023-08-01), Heft 8, S. 5218-5226
Online
academicJournal
Zugriff:
Titel: |
A Two-Dimensional MoS<subscript>2</subscript> Device and CMOS Inverter Based on the Plasma Immersion Doping Technique
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Autor/in / Beteiligte Person: | Zhang, Yuan ; Hu, Shijiao ; Zhou, Yufei ; Xu, Tingwei ; Peng, Yu ; Deng, Huaicheng ; Bao, Xiaoqing ; Zeng, Xiangbin |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 52 (2023-08-01), Heft 8, S. 5218-5226 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/s11664-023-10462-2 |
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