A Novel High-Performance CMOS VCRO Based on Electrically Doped Nanowire FETs in 10 nm Node
In: Silicon, Jg. 15 (2023-12-01), Heft 18, S. 7771-7783
Online
academicJournal
Zugriff:
Titel: |
A Novel High-Performance CMOS VCRO Based on Electrically Doped Nanowire FETs in 10 nm Node
|
---|---|
Autor/in / Beteiligte Person: | Ziabari, Seyed Ali Sedigh ; Aziz, Syed Mahfuzul ; Lederer, Dimitri |
Link: | |
Zeitschrift: | Silicon, Jg. 15 (2023-12-01), Heft 18, S. 7771-7783 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 1876-990X (print) ; 1876-9918 (print) |
DOI: | 10.1007/s12633-023-02612-2 |
Sonstiges: |
|