Gate leakage current of NMOSFET with ultra-thin gate oxide
In: Journal of Central South University: Science & Technology of Mining and Metallurgy, Jg. 19 (2012-11-01), Heft 11, S. 3105-3109
Online
academicJournal
Zugriff:
Titel: |
Gate leakage current of NMOSFET with ultra-thin gate oxide
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Autor/in / Beteiligte Person: | Hu, Shi-gang / 胡仕刚 ; Wu, Xiao-Feng / 吴笑峰 ; Xi, Zai-fang / 席在芳 |
Link: | |
Zeitschrift: | Journal of Central South University: Science & Technology of Mining and Metallurgy, Jg. 19 (2012-11-01), Heft 11, S. 3105-3109 |
Veröffentlichung: | 2012 |
Medientyp: | academicJournal |
ISSN: | 2095-2899 (print) ; 2227-5223 (print) |
DOI: | 10.1007/s11771-012-1385-7 |
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