Micromachined Silicon-core Substrate-integrated Waveguides with Coplanar-probe Transitions at 220-330 GHz
In: Transmission-line structures, 2018, S. 190-193
Online
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Zugriff:
Abstract—In this paper, we present for the first time on, to the best of our knowledge, the first silicon-core micromachined substrate-integrated waveguide (SIW) in the 220-325 GHz frequency range. In contrast to the fabrication methods used for conventional SIW known from substantially lower frequencies, micromachining allows for a full-height waveguide and near-ideal and arbitrarily shaped sidewalls. The silicon dielectric core allows for downscaling the waveguide and components by a factor of 3.4 as compared to an air-filled waveguide. At 330 GHz, the measured waveguide insertion loss is as low as 0.43 dB/mm (0.14 dB/λg, normalized to the guided wavelength). Devices were manufactured using a two-mask micromachining process. Furthermore, a low-loss ultra-wideband coplanar-waveguide (CPW) transition was successfully implemented, which comprises the very first CPW-to-SIW transitions in this frequency range. The measured transition performance is better than 0.5 dB insertion loss (average of 0.43 dB in the band above 15% above the waveguide-cutoff frequency), which is lower than previously reported CPW-to-SIW transitions even at 3 times lower frequencies, and the return loss is better than 14 dB for 75% of the waveguide band.
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Micromachined Silicon-core Substrate-integrated Waveguides with Coplanar-probe Transitions at 220-330 GHz
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Autor/in / Beteiligte Person: | Krivovitca, Aleksandr ; Shah, Umer ; Glubokov, Oleksandr ; Oberhammer, Joachim, Professor |
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Zeitschrift: | Transmission-line structures, 2018, S. 190-193 |
Veröffentlichung: | 2018 |
Medientyp: | unknown |
DOI: | 10.1109/MWSYM.2018.8439598 |
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