High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators
In: IEEE Electron Device Letters, Jg. 40 (2019), Heft 5, S. 670-673
Online
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Zugriff:
Digital electronics in SiC find use in high-temperature applications. The objective of this study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a recessed channel CMOS process. Selective doping is achieved by etching epitaxial layers into mesas. A deposited SiO2-film, post-annealed at lowtemperature and re-oxidized in pyrogenic steam, is used as the gate oxide to produce a conformal gate oxide over the non-planar topography. PMOS, NMOS, inverters, and ring oscillators are characterized at 200 °C. The PMOS requires reduced threshold voltage in order to enable long term reliability. This result demonstrates that it is possible to fabricate SiC CMOS without ion implantation and by low-temperature processing.
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High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators
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Autor/in / Beteiligte Person: | Ekström, Mattias ; Malm, B. Gunnar ; Zetterling, Carl-Mikael |
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Zeitschrift: | IEEE Electron Device Letters, Jg. 40 (2019), Heft 5, S. 670-673 |
Veröffentlichung: | 2019 |
Medientyp: | unknown |
DOI: | 10.1109/LED.2019.2903184 |
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