A CPW Probe to Rectangular Waveguide Transition for On-Wafer Micromachined Waveguide Characterization
In: IEEE Transactions on Terahertz Science and Technology, Jg. 14 (2024), Heft 1, S. 98-108
Online
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Zugriff:
A new transition from coplanar waveguide probe to micromachined rectangular waveguide for on-wafer device characterization is presented in this article. The transition is fabricated in the same double H-plane split silicon micromachined waveguide technology as the devices under test, requiring no additional post-processing or assembly steps. We outline the design and fabrication process of the transition for the frequency band of 220–330 GHz. A coplanar waveguide structure acts as the probing interface, with an E-field probe protruding in the waveguide cavity exciting the fundamental waveguide mode. Guard structures around the E-field probe increase the aspect ratio during deep reactive ion etching and secure its geometry. A full equivalent circuit model is provided by analyzing its working principle. RF characterization of fabricated devices is performed for both single-ended and back-to-back configurations. Measured S-parameters of the single-ended transition are obtained by applying a two-tiered calibration and are analyzed using the equivalent circuit model. The insertion loss of the single-ended transition lies between 0.3 dB and 1.5 dB over the whole band, with the return loss in excess of 8 dB. In addition to previously reported characterization of a range of devices under test the viability of the transition for on-wafer device calibration is demonstrated by characterizing a straight waveguide line, achieving an insertion loss per unit length of 0.02–0.08 dB/mm in the frequency band of 220–330 GHz.
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A CPW Probe to Rectangular Waveguide Transition for On-Wafer Micromachined Waveguide Characterization
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Autor/in / Beteiligte Person: | Beuerle, Bernhard ; Campion, James ; Glubokov, Oleksandr ; Shah, Umer ; Oberhammer, Joachim, Professor |
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Zeitschrift: | IEEE Transactions on Terahertz Science and Technology, Jg. 14 (2024), Heft 1, S. 98-108 |
Veröffentlichung: | 2024 |
Medientyp: | unknown |
DOI: | 10.1109/tthz.2023.3332304 |
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