A Class-D CMOS DCO with an on-chip LDO
In: European Solid State Circuits Conference (ESSCIRC), 2014,Venice, Italy,-- Proceedings Of The 40th European Solid-State Circuit Conference (ESSCIRC 2014) ELLIIT: the Linköping-Lund initiative on IT and mobile communication, 2014, S. 335-338
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Zugriff:
This paper presents the co-design of a class-D digitally-controlled oscillator (DCO) and a low-dropout voltage regulator (LDO) generating the supply voltage for the DCO. Despite the high intrinsic supply pushing of the class-D oscillator topology, the LDO noise has only a very marginal impact on the DCO phase noise. The class-D DCO and LDO have been integrated in a 65nm CMOS process without any thick top metal layer. The oscillation frequency is tunable between 3.0 GHz and 4.3 GHz, for a tuning range of 36%, with a fine frequency step below 3 kHz and a fine frequency range of 10MHz (both measured at 3 GHz). Drawing 9.0mA from 0.4V (corresponding to an unregulated supply voltage of 0.6 V), the phase noise is -145.5 dBc/Hz at a 10MHz offset from a 3.0 GHz carrier. The resulting FoM is 189.5 dBc/Hz, and varies less than 1 dB across the tuning range. The FoM increases to above 190 dBc/Hz when the regulated supply voltage is 0.5V.
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A Class-D CMOS DCO with an on-chip LDO
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Autor/in / Beteiligte Person: | Fanori, Luca ; Mattsson, Thomas ; Andreani, Pietro |
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Zeitschrift: | European Solid State Circuits Conference (ESSCIRC), 2014,Venice, Italy,-- Proceedings Of The 40th European Solid-State Circuit Conference (ESSCIRC 2014) ELLIIT: the Linköping-Lund initiative on IT and mobile communication, 2014, S. 335-338 |
Veröffentlichung: | 2014 |
Medientyp: | unknown |
ISSN: | 1930-8833 (print) |
DOI: | 10.1109/ESSCIRC.2014.6942090 |
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