Disorder is not always bad for charge-to-spin conversion in WTe 2
In: Matter, Jg. 4 (2021), Heft 5, S. 1440-1441
Online
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Zugriff:
The Wang group at Stanford University demonstrates disordered WTe films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.
Titel: |
Disorder is not always bad for charge-to-spin conversion in WTe 2
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Autor/in / Beteiligte Person: | Guimarães, Marcos ; Dash, Saroj Prasad |
Link: | |
Zeitschrift: | Matter, Jg. 4 (2021), Heft 5, S. 1440-1441 |
Veröffentlichung: | 2021 |
Medientyp: | unknown |
ISSN: | 2590-2393 (print) ; 2590-2385 (print) |
DOI: | 10.1016/j.matt.2021.04.009 |
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