A 2x6b 8GS/s 17-24GHz I/Q RF-DAC based Transmitter in 22nm FDSOI CMOS
In: IEEE Microwave and Wireless Components Letters, Jg. 31 (2021), Heft 8, S. 929-932
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Zugriff:
We describe a 2×6 bit Cartesian RF IQ-modulator, implemented on 0.15mm2 in a 22nm FDSOI CMOS technology. Measurements show a 3dB bandwidth of 17–24 GHz and a saturated output power of 10.4dBm with a peak drain efficiency of 15.6%. The IQ-modulator has been verified up to 8GS/s. To the best of our knowledge, this is the highest-frequency CMOS RF IQ-modulator using sub-50%-duty-cycle LO signals, and the highest sample rate reported for >3 bit fully integrated Cartesian IQ-modulators.
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A 2x6b 8GS/s 17-24GHz I/Q RF-DAC based Transmitter in 22nm FDSOI CMOS
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Autor/in / Beteiligte Person: | Åberg, Victor ; Fager, Christian ; Svensson, Lars |
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Zeitschrift: | IEEE Microwave and Wireless Components Letters, Jg. 31 (2021), Heft 8, S. 929-932 |
Veröffentlichung: | 2021 |
Medientyp: | unknown |
ISSN: | 1558-1764 (print) ; 1531-1309 (print) |
DOI: | 10.1109/LMWC.2021.3089779 |
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