Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Epitaxial Layer Thickness.
In: IEEE Transactions on Nuclear Science, Jg. 64 (2017), Heft 1, part 1, S. 38-44
Online
academicJournal
Zugriff:
Titel: |
Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Epitaxial Layer Thickness.
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Autor/in / Beteiligte Person: | Virmontois, Cedric ; Durnez, Clementine ; Estribeau, Magali ; Cervantes, Paola ; Avon, Barbara ; Goiffon, Vincent ; Magnan, Pierre ; Materne, Alex ; Bardoux, Alain |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 64 (2017), Heft 1, part 1, S. 38-44 |
Veröffentlichung: | 2017 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2016.2641162 |
Sonstiges: |
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