Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation.
In: IEEE Transactions on Nuclear Science, Jg. 64 (2017-01-15), Heft 1, part 2, S. 654-664
Online
academicJournal
Zugriff:
Titel: |
Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation.
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Autor/in / Beteiligte Person: | Wu, Zhenyu ; Chen, Shuming ; Yu, Junting ; Chen, Jianjun ; Huang, Pengcheng ; Song, Ruiqiang |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 64 (2017-01-15), Heft 1, part 2, S. 654-664 |
Veröffentlichung: | 2017 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2016.2633405 |
Sonstiges: |
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