Transient Response in PPD CMOS Image Sensors Irradiated by Gamma Rays: Variation of Dose Rates and Integration Times.
In: IEEE Transactions on Nuclear Science, Jg. 66 (2019-06-01), Heft 6, S. 880-885
Online
academicJournal
Zugriff:
Titel: |
Transient Response in PPD CMOS Image Sensors Irradiated by Gamma Rays: Variation of Dose Rates and Integration Times.
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Autor/in / Beteiligte Person: | Wang, Zujun ; Xue, Yuanyuan ; Liu, Minbo ; Xu, Rui ; Ning, Hao ; Gao, Wu ; Yao, Zhibin ; He, Baoping ; Jin, Junshan ; Ma, Wuying ; Sheng, Jiangkun ; Dong, Guantao |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 66 (2019-06-01), Heft 6, S. 880-885 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2019.2910573 |
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