High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors.
In: IEEE Transactions on Nuclear Science, Jg. 67 (2020-07-01), Heft 7, S. 1256-1262
Online
academicJournal
Zugriff:
Titel: |
High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors.
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Autor/in / Beteiligte Person: | Rizzolo, Serena ; Le Roch, Alexandre ; Marcelot, Olivier ; Corbiere, Franck ; Paillet, Philippe ; Gaillardin, Marc ; Magnan, Pierre ; Goiffon, Vincent |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 67 (2020-07-01), Heft 7, S. 1256-1262 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2020.2989662 |
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