Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses.
In: IEEE Transactions on Nuclear Science, Jg. 67 (2020-07-01), Heft 7, S. 1284-1292
Online
academicJournal
Zugriff:
Titel: |
Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses.
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Autor/in / Beteiligte Person: | Dewitte, H. ; Rizzolo, S. ; Paillet, P. ; Magnan, P. ; Le Roch, A. ; Corbiere, F. ; Molina, R. ; Girard, S. ; Allanche, T. ; Muller, C. ; Desjonqueres, H. ; Mace, J. R. ; Baudu, J. P. ; Flores, A. Saravia ; Goiffon, V. |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 67 (2020-07-01), Heft 7, S. 1284-1292 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2020.3001618 |
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