ASET and TID Characterization of a Radiation Hardened Bandgap Voltage Reference in a 28-nm Bulk CMOS Technology.
In: IEEE Transactions on Nuclear Science, Jg. 69 (2022-05-01), Heft 5, S. 1141-1147
Online
academicJournal
Zugriff:
Titel: |
ASET and TID Characterization of a Radiation Hardened Bandgap Voltage Reference in a 28-nm Bulk CMOS Technology.
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Autor/in / Beteiligte Person: | Chen, Jianjun ; Chi, Yaqing ; Liang, Bin ; Yuan, Hengzhou ; Wen, Yi ; Xing, Haiyuan ; Yao, Xiaohu |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 69 (2022-05-01), Heft 5, S. 1141-1147 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2022.3152496 |
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