TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses.
In: IEEE Transactions on Nuclear Science, Jg. 69 (2022-07-01), Heft 7, S. 1444-1452
Online
academicJournal
Zugriff:
Titel: |
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses.
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Autor/in / Beteiligte Person: | Bonaldo, Stefano ; Gorchichko, Mariia ; Zhang, En Xia ; Ma, Teng ; Mattiazzo, Serena ; Bagatin, Marta ; Paccagnella, Alessandro ; Gerardin, Simone ; Schrimpf, Ronald D. ; Reed, Robert A. ; Linten, Dimitri ; Mitard, Jerome ; Fleetwood, Daniel M. |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 69 (2022-07-01), Heft 7, S. 1444-1452 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2022.3142385 |
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