Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM.
In: IEEE Transactions on Nuclear Science, Jg. 54 (2007-12-01), Heft 6, S. 2413-2418
Online
academicJournal
Zugriff:
Titel: |
Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM.
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Autor/in / Beteiligte Person: | Correas, Vincent ; Saigné, F. ; Sagnes, B. ; Boch, J. ; Gasiot, G. ; Giot, D. ; Roche, P. |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 54 (2007-12-01), Heft 6, S. 2413-2418 |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2007.910038 |
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