Comprehensive Study of Total Ionizing Dose Damage Mechanisms and Their Effects on Noise Sources in a 90 nm CMOS Technology.
In: IEEE Transactions on Nuclear Science, Jg. 55 (2008-12-01), Heft 6, S. 3272-3279
Online
academicJournal
Zugriff:
Titel: |
Comprehensive Study of Total Ionizing Dose Damage Mechanisms and Their Effects on Noise Sources in a 90 nm CMOS Technology.
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Autor/in / Beteiligte Person: | Re, Valerio ; Gaioni, Luigi ; Manghisoni, Massimo ; Ratti, Lodovico ; Traversi, Gianluca |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 55 (2008-12-01), Heft 6, S. 3272-3279 |
Veröffentlichung: | 2008 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2008.2005410 |
Sonstiges: |
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