Half-Metallic Behavior of Transition Metal-Doped Chalcopyrite Semiconductor: LDA and SIC-LDA Calculation.
In: Journal of Superconductivity & Novel Magnetism, Jg. 29 (2016-10-01), Heft 10, S. 2629-2634
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Zugriff:
Using the first principles with local density approximation (LDA) and self-interaction-corrected local density approximation (SIC-LDA), the electronic structure of transition metal-doped copper indium sulfide chalcopyrite (CuInS) has been calculated and the effect of low-impurity concentration on magnetic structure has been carried out for both LDA and SIC-LDA; also, the magnetic transition temperature for Cr-doped CuInS was reported in the concentration range of 1-6 % with LDA and SIC-LDA. It is shown that the chalcopyrite semiconductor-doped transition metals (with low concentration) exhibit a high magnetic critical temperature and half-metallic behavior that could have a significant participation in spintronic applications. [ABSTRACT FROM AUTHOR]
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Half-Metallic Behavior of Transition Metal-Doped Chalcopyrite Semiconductor: LDA and SIC-LDA Calculation.
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Autor/in / Beteiligte Person: | Laghrissi, Ayoub ; Salmani, El ; Benchafia, El ; Dehmani, Mustapha ; Ez-Zahraouy, Hamid ; Benyoussef, Abdelilah |
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Zeitschrift: | Journal of Superconductivity & Novel Magnetism, Jg. 29 (2016-10-01), Heft 10, S. 2629-2634 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 1557-1939 (print) |
DOI: | 10.1007/s10948-016-3571-6 |
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