Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p- i- n Structures on the Relaxation time of Nonequilibrium Carriers.
In: Semiconductors, Jg. 52 (2018-02-01), Heft 2, S. 165-171
Online
academicJournal
Zugriff:
The results of an experimental study of the capacitance-voltage ( C- V) characteristics and deep-level transient spectroscopy (DLTS) spectra of p - p - i- n homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of misfit dislocations, all grown by liquid-phase epitaxy (LPE), are presented. Deep-level acceptor defects identified as HL2 and HL5 are found in the epitaxial p and n layers of the GaAs-based structure. The electron and hole dislocation-related deep levels, designated as, respectively, ED1 and HD3, are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The following hole trap parameters: thermal activation energies ( E ), capture cross sections (σ), and concentrations ( N ) are calculated from the Arrhenius dependences to be E = 845 meV, σ = 1.33 × 10 cm, N = 3.80 × 10 cm for InGaAs/GaAs and E = 848 meV, σ = 2.73 × 10 cm, N = 2.40 × 10 cm for GaAsSb/GaAs heterostructures. The concentration relaxation times of nonequilibrium carriers are estimated for the case in which dislocation-related deep acceptor traps are involved in this process. These are 2 × 10 s and 1.5 × 10 s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 1.6 × 10 s for the GaAs homostructures. [ABSTRACT FROM AUTHOR]
Titel: |
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p- i- n Structures on the Relaxation time of Nonequilibrium Carriers.
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Autor/in / Beteiligte Person: | Sobolev, M. ; Soldatenkov, F. |
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Zeitschrift: | Semiconductors, Jg. 52 (2018-02-01), Heft 2, S. 165-171 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 1063-7826 (print) |
DOI: | 10.1134/S1063782618020173 |
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