Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE.
In: Semiconductors, Jg. 52 (2018-03-01), Heft 3, S. 366-370
Online
academicJournal
Zugriff:
Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n-Al0.07GaAs-p-Al0.07GaAs-p-Al0.25GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illumination distribution over the photoreceiving surface. In the former case, a monochromatic efficiency of η = 53.1% is achieved for samples with an area of S = 4 cm² at a power of 1.2 W. At S = 10.2 mm² the efficiency is 58.3% at a laser power of 0.7 W. [ABSTRACT FROM AUTHOR]
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Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE.
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Autor/in / Beteiligte Person: | Khvostikov, V. P. ; Sorokina, S. V. ; Potapovich, N. S. ; Khvostikova, O. A. ; Timoshina, N. Kh. ; Shvarts, M. Z. |
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Zeitschrift: | Semiconductors, Jg. 52 (2018-03-01), Heft 3, S. 366-370 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 1063-7826 (print) |
DOI: | 10.1134/S1063782618030120 |
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